Atomic-layer deposition (ALD) is considered a promising method for the fabrication of high-
quality indium–gallium–zinc oxide (IGZO) films because of its excellent film conformity and …

High-quality indium–gallium–zinc oxide (IGZO) films synthesized by atomic layer deposition
(ALD) using a single cocktail precursor based on a liquid-delivery system are demonstrated …

We propose the introduction of a magnesium oxide (MgO x) layer to reduce the temperature
required for the activation of indium gallium zinc oxide (IGZO) thin films. By incorporating the …

A solution-based surface modification method is first proposed for improving electrical
performance of the ZnO transistors. The ZnO transistors are infiltrated for treatment in the …

Both n-and p-type amorphous oxide semiconductors (AOSs) are essential for realizing new
functions in emerging optoelectronic devices. Their conduction types are determined …

Abstract p-Type tin (II) oxide (SnO (Sn 2+)) formation using radiofrequency (RF) reactive
magnetron sputtering and post-deposition annealing (PDA) processes was investigated …

This study investigated novel driving scheme for low-temperature polycrystalline silicon and
oxide (LTPO) active-matrix organic light-emitting diode (AMOLED) displays under variable …

We present a ZnSnO (ZTO) thin-film transistor (TFT) with enhanced mobility, achieved
through the incorporation of a metal-capping layer. The fabrication of the ZTO active layer …

This review summarizes recent progress of simulation and modeling of two important types
of thin-film heterojunction transistors. Both structures functionally rely on the formation of a …

The effects of post‐annealing on amorphous InGaZnO (a‐IGZO) TFTs with ultrathin atomic
layer deposited (ALD) AlOxgate insulator (GI) were investigated. The non‐annealed devices …