Abstract Van der Waals (vdW) 2D/3D heterostructures are extensively studied for high‐
performance photodetector applications. Until now, the type of 2D materials has been the …

We present improvements and calibrations for boron and phosphorus doping models, which
allow highly predictive simulations of various doping processes used for solar cells. Besides …

Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-
type cells. We use rapid thermal annealing with temperatures up to 1250° C and annealing …

This chapter aims to provide students/workers in the field of photovoltaics with the valuable
information and knowledge needed to understand the physics and operation of high …

In this paper, we present the development of accurate process simulations for the processes
leading to the formation of the n-type (phosphorus doped) regions in high efficiency …

This paper is motivated by the question of how residual implantation damage degrades
solar cell performance. In order to avoid such degradation, annealing processes of …

Boron junction and its passivation is an active topic in photovoltaic research due to its
importance to passivated emitter and rear totally‐diffused (PERT) bifacial Si solar cell. In this …

The effect of process-induced defects on the photo-generated charge-carrier lifetime and
solar cell performance is critical, which will help optimize the process recipe. In this work, we …

Ion implantation technology has become economically competitive for solar cell doping in
about 2012. The decisive reduction in production costs was achieved by using plasma …

We present structural investigations of implant-induced crystal defects after ion implantation
of boron on randomly textured Si (001) and subsequent annealing. We find that the use of a …