Nitrogen segregation and coprecipitation with oxygen in N-doped Czochralski (N-CZ) silicon
wafers are investigated as a function of depth based on extended defect structure and …

The generation of thermal donors (TDs) depends on initial oxygen concentration, annealing
temperature and its duration. An annealing process at 450° C for several hours generates …

Generation of new donors (NDs) as a result of annealing of boron-doped CZ-silicon at 650°
C under a nitrogen ambient for different durations was studied. The results of the influence of …

The effect of step-annealing necessitated by the difficulties being faced in the long duration
annealing treatments to be given to CZ-silicon has been studied. One pre-anneal of 10 h …

Step-annealing schedules for two different annealing chains, ie 450–650–450 and 650–450–
700° C have been followed to study the effect of oxygen and carbon on donor formation in …

Generation of thermal donors (TDs) and oxygen precipitation as a result of low temperature
annealing of boron-doped CZ-silicon under nitrogen ambient for different durations has …

Exact kinetics of donor formation and possible number of oxygen atoms in a single TD are
two aspects out of many problems related with oxygen related donors in CZ—silicon, which …

Due to a lack of proper understanding about the formation mechanism of oxygen related
donors during the transition temperature range (465–540° C) which exhibits the transition of …

Exact kinetics of donor formation and possible number of oxygen atoms in a single TD are
two aspects out of many problems related with oxygen related donors in CZ-silicon, which …

Ultra high purity silicon is advantageously modified by as low as 5× 10 14 cm− 3 nitrogen.
Such a doping level was proved to drastically impact grown-in and process-induced defects …