Arsenides-and related III-V materials-based multilayered structures for terahertz applications: Various designs and growth technology
AE Yachmenev, SS Pushkarev, RR Reznik… - Progress in Crystal …, 2020 - Elsevier
The fabrication and investigation of single and multilayered structures have become an
essential issue in the past decades since these structures directly define valuable properties …
essential issue in the past decades since these structures directly define valuable properties …
A high-power broadband terahertz source enabled by three-dimensional light confinement in a plasmonic nanocavity
The scope and potential uses of time-domain terahertz imaging and spectroscopy are
mainly limited by the low optical-to-terahertz conversion efficiency of photoconductive …
mainly limited by the low optical-to-terahertz conversion efficiency of photoconductive …
[HTML][HTML] High power telecommunication-compatible photoconductive terahertz emitters based on plasmonic nano-antenna arrays
We present a high-power and broadband photoconductive terahertz emitter operating at
telecommunication optical wavelengths, at which compact and high-performance fiber …
telecommunication optical wavelengths, at which compact and high-performance fiber …
Terahertz spectrometers: A key tool bridging the electronics–photonics gap
R Liu, M Chen, Z Zhao, J Zhang, Y Wang - Optics & Laser Technology, 2025 - Elsevier
The terahertz (THz) region of the electromagnetic spectrum, often referred to as the bridge
between electronics and photonics, has emerged as a highly active area of research, owing …
between electronics and photonics, has emerged as a highly active area of research, owing …
Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires
Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing,
spectroscopy and imaging technologies in the decades to come. THz emitters and receivers …
spectroscopy and imaging technologies in the decades to come. THz emitters and receivers …
High power generation of THz from 1550-nm photoconductive emitters
A Mingardi, WD Zhang, ER Brown, AD Feldman… - Optics …, 2018 - opg.optica.org
Two photoconductive emitters-one with a self-complementary square spiral antenna, and
the other with a resonant slot antenna-were fabricated on a GaAs epilayer embedded with …
the other with a resonant slot antenna-were fabricated on a GaAs epilayer embedded with …
THz generation using extrinsic photoconductivity at 1550 nm
JR Middendorf, ER Brown - Optics Express, 2012 - opg.optica.org
1550-nm pulses from a fiber-mode-locked laser are used to drive an ErAs: GaAs
photoconductive switch, resulting in easily measured THz radiation with average broadband …
photoconductive switch, resulting in easily measured THz radiation with average broadband …
[HTML][HTML] Resonant cavities for efficient LT-GaAs photoconductors operating at λ= 1550 nm
We show that photoconductors based on low-temperature-grown GaAs (LT-GaAs) can be
efficiently operated by 1.55 μm telecom wavelength by using metallic mirror based optical …
efficiently operated by 1.55 μm telecom wavelength by using metallic mirror based optical …
Generation of terahertz radiation from fe-doped InGaAsP using 800 nm to 1550 nm pulsed laser excitation
We demonstrate efficient generation of terahertz (THz) frequency radiation by pulsed
excitation, at wavelengths between 800 and 1550 nm, of photoconductive (PC) switches …
excitation, at wavelengths between 800 and 1550 nm, of photoconductive (PC) switches …
Photoconductive materials for THz generation at 1550 nm: ErAs: GaAs vs InGaAs based materials
M Martin, ER Brown - Terahertz, RF, Millimeter, and …, 2015 - spiedigitallibrary.org
Since the 1990s the photoconductive material of choice for THz generation has been low-
temperature grown GaAs (LTG-GaAs) thanks to its useful mobility (~ 200 cm 2/Vs), high dark …
temperature grown GaAs (LTG-GaAs) thanks to its useful mobility (~ 200 cm 2/Vs), high dark …