Au droplets are used as a catalyst for the growth of nanowires on Si (111) substrate via the
vapor–liquid–solid (VLS) mechanism. The dewetting of a Au thin film is the most common …

The incorporation of Si into vapor–liquid–solid GaAs nanowires often leads to p-type doping,
whereas it is routinely used as an n-dopant of planar layers. This property limits the …

In this work, we demonstrate the growth of vertically oriented GaAs nanowires (NWs) and
microplatelets directly on a patterned SiO2/Si (111) substrate by hydride vapor-phase …

Controllable doping of III–V nanowires grown by the vapor–liquid–solid method remains a
challenging task. In sharp contrast to planar layers of the same materials, dopants mainly …

We have used a polarized spatially resolved microluminescence technique to investigate
photocarrier charge and spin transport at 6 K in a GaAs nanowire (NW; n-type doping …

Control and analysis of the crystal phase in semiconductor nanowires are of high
importance due to the new possibilities for strain and band gap engineering for advanced …

In this article, Si nanoparticle (NP) films were prepared by pulsed laser ablation (PLA) in the
argon atmosphere of 10 Pa at room temperature under different pulse repetition rates from 1 …

It is well-known that the chemical potential which drives the vapor-liquid-solid growth of
semiconductor nanowires is strongly affected by the liquid phase composition. Here, we …

We have used a polarized microluminescence technique to investigate photocarrier charge
and spin transport in depleted n-type GaAs nanowires (≈ 10 17 cm− 3 doping level). At 6 K …

We present a comparative study of GaAs nanowire growth on Si (111) substrates by
molecular beam epitaxy with the assistance of Au and Ag colloidal nanoparticles. Our …