Synthesis and applications of III–V nanowires
E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …
dimensional examples, have developed into one of the most intensely studied fields of …
Doping of III-nitride materials
P Pampili, PJ Parbrook - Materials Science in Semiconductor Processing, 2017 - Elsevier
In this review paper we will report the current state of research regarding the doping of III-
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …
Substantial P‐Type Conductivity of AlN Achieved via Beryllium Doping
Beryllium has long been predicted by first principle theory as the best p‐type dopant for GaN
and AlN. But experimental validation of these theories has not, until now, borne out the …
and AlN. But experimental validation of these theories has not, until now, borne out the …
[HTML][HTML] Prospectives for AlN electronics and optoelectronics and the important role of alternative synthesis
WA Doolittle, CM Matthews, H Ahmad, K Motoki… - Applied Physics …, 2023 - pubs.aip.org
Future applications for emerging AlN semiconductor electronics and optoelectronics are
facilitated by emerging doping technologies enabled by low temperature, non-equilibrium …
facilitated by emerging doping technologies enabled by low temperature, non-equilibrium …
Finite element simulations of compositionally graded InGaN solar cells
GF Brown, JW Ager III, W Walukiewicz, J Wu - Solar Energy Materials and …, 2010 - Elsevier
The solar power conversion efficiency of compositionally graded InxGa1− xN solar cells was
simulated using a finite element approach. Incorporating a compositionally graded region on …
simulated using a finite element approach. Incorporating a compositionally graded region on …
Progress in efficient doping of high aluminum-containing group III-nitrides
YH Liang, E Towe - Applied Physics Reviews, 2018 - pubs.aip.org
The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two
that are critical to a number of technologies in modern life—the other being silicon. Light …
that are critical to a number of technologies in modern life—the other being silicon. Light …
Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN
Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN |
Applied Physics Letters | AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt …
Applied Physics Letters | AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt …
[HTML][HTML] High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering
We have grown Mg-doped GaN films with low residual hydrogen concentration using a low-
temperature pulsed sputtering deposition (PSD) process. The growth system is inherently …
temperature pulsed sputtering deposition (PSD) process. The growth system is inherently …
[HTML][HTML] Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN
BP Gunning, CAM Fabien, JJ Merola… - Journal of Applied …, 2015 - pubs.aip.org
The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type
GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions …
GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions …
Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm− 3 in GaN
The free hole carriers in GaN have been limited to concentrations in the low 10 18 cm− 3
range due to the deep activation energy, lower solubility, and compensation from defects …
range due to the deep activation energy, lower solubility, and compensation from defects …