The progress made toward the definition of a modular compact modeling technology for
graphene field‐effect transistors (GFETs) that enables the electrical analysis of arbitrary …

The photoconductivity in monolayer MoS 2 back-gate transistors is studied as a function of
temperature and pressure. The photocurrent increases linearly with the light intensity up to a …

The electrical behavior and the photoresponse of rhenium disulfide field-effect transistors
(FETs) have been widely studied; however, only a few works have investigated the …

Schottky barriers (SBs) are often formed at the semiconductor/metal contacts and affect the
electrical behavior of semiconductor devices. In particular, SBs are playing a major role in …

We studied the temperature dependent transport properties and memory behaviour of
ultrathin black phosphorus field-effect transistors. The devices show electrical conductance …

High‐κ materials that exhibit large permittivity and band gaps are needed as gate dielectrics
to enhance capacitance and prevent leakage current in downsized technology nodes …

We report the fabrication and optoelectronic characterization of field-effect transistors (FETs)
based on few-layer ReSe2. The devices show n-type conduction due to the Cr contacts that …

Terahertz (THz) waves have revealed a great potential for use in various fields and for a
wide range of challenging applications. High-performance detectors are, however, vital for …

Two-dimensional materials have emerged as an important research frontier for overcoming
the challenges in nanoelectronics and for exploring new physics. Among them, black …

Metal contacts play a fundamental role in nanoscale devices. In this work, Schottky metal
contacts in monolayer molybdenum disulfide (MoS2) field-effect transistors are investigated …