Review of recent trends in flexible metal oxide thin-film transistors for analog applications
Thanks to the extraordinary advances flexible electronics have experienced over the last
decades, applications such as conformable active-matrix displays, ubiquitously integrated …
decades, applications such as conformable active-matrix displays, ubiquitously integrated …
Ultraviolet-assisted low-thermal-budget-driven α-InGaZnO thin films for high-performance transistors and logic circuits
Y Zhang, G He, L Wang, W Wang, X Xu, W Liu - ACS nano, 2022 - ACS Publications
Developing a low-temperature fabrication strategy of an amorphous InGaZnO (α-IGZO)
channel layer is a prerequisite for high-performance oxide-based thin film transistor (TFT) …
channel layer is a prerequisite for high-performance oxide-based thin film transistor (TFT) …
Spray‐pyrolyzed high‐k zirconium‐aluminum‐oxide dielectric for high performance metal‐oxide thin‐film transistors for low power displays
A high‐k, zirconium‐aluminum‐oxide (ZAO) gate insulator (GI) using low‐cost spray
pyrolysis technique for large area and low power electronics is demonstrated. The high …
pyrolysis technique for large area and low power electronics is demonstrated. The high …
Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity
We report high performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film
transistors (TFTs) with 10 nm atomic-layer-deposited HfO2 as the gate dielectric, achieving …
transistors (TFTs) with 10 nm atomic-layer-deposited HfO2 as the gate dielectric, achieving …
Spray pyrolyzed amorphous InGaZnO for high performance, self‐aligned coplanar thin‐film transistor backplanes
High‐performance, spray‐pyrolyzed amorphous indium‐gallium‐zinc oxide (a‐IGZO) thin‐
film transistor (TFT) with self‐aligned (SA) coplanar structure is demonstrated. The spray …
film transistor (TFT) with self‐aligned (SA) coplanar structure is demonstrated. The spray …
Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al2O3-Passivated High-k HfGdOx Dielectrics
Y Zhang, Y Lin, G He, B Ge, W Liu - ACS Applied Electronic …, 2020 - ACS Publications
High-speed operation and low-power-consumption requirements have accelerated the
development of thin-film transistors (TFTs) with exploration of gate dielectrics. In this work …
development of thin-film transistors (TFTs) with exploration of gate dielectrics. In this work …
Biaxially Stretchable Active‐Matrix Micro‐LED Display with Liquid Metal Interconnects
A stretchable active‐matrix (AM) display is a next‐generation display that breaks away from
displaying limited information on flat and curved screens. However, the implementation of …
displaying limited information on flat and curved screens. However, the implementation of …
Effect of femtosecond laser postannealing on a-IGZO thin-film transistors
JY Lee, F Shan, HS Kim, SJ Kim - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
In this study, the effects of femtosecond laser postannealingwere experimentally confirmed
by applying it to amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) with …
by applying it to amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) with …
Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment
S Knobelspies, A Takabayashi, A Daus… - Solid-State …, 2018 - Elsevier
In this work, we analyze the effect of CF 4/O 2 plasma treatment on the contact interface
between the amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) semiconductor and Titanium …
between the amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) semiconductor and Titanium …
High field temperature-independent field-effect mobility of amorphous indium–gallium–zinc oxide thin-film transistors: Understanding the importance of equivalent …
We investigate the temperature dependence of field-effect mobility (μ eff) on amorphous
indium-gallium-zinc oxide (α-IGZO) thin-film transistors (TFTs) having 10-nm-thick HfO 2 …
indium-gallium-zinc oxide (α-IGZO) thin-film transistors (TFTs) having 10-nm-thick HfO 2 …