Large-Signal Characterisation and Analysis of AlN/GaN MISHEMTs on Si with a PAE> 62% at 28 GHz
R ElKashlan, S Yadav, A Khaled, D Xiao… - 2024 IEEE/MTT-S …, 2024 - ieeexplore.ieee.org
We investigate AlN/GaN MISHEMTs fabricated on a 200 mm Si substrate with an in-situ SiN
as the gate insulator and access region passivation layer. The impact of SiN thickness …
as the gate insulator and access region passivation layer. The impact of SiN thickness …