This review is devoted to the analysis of the problems related to fabrication of the Si porous
layers. The review was motivated by a great interest to Si-based porous materials from nano …

This article reports the properties and the behavior of GaN during the photoelectrochemical
etching process using four different electrolytes. The measurements show that the porosity …

Fabricating a pit array on the surface of indium phosphide wafer can change its photoelectric
properties, improve its photoelectric conversion efficiency, and expand its application range …

In this paper, a review on electrochemical porous etching of semiconductors is proposed.
After a brief history, chemical and electrochemical etching of semiconductors are considered …

For the first time, the photoanodic behavior of undoped n-InP (≈ 10 15 atoms. cm− 3) is
studied in liquid ammonia at low temperature (-55° C) under atmospheric pressure. Under …

We propose a three-step model of electrochemical nanopore formation in n-InP in KOH that
explains how crystallographically oriented etching can occur even though the rate …

Anodically dissolving semiconductor electrodes such as Si, Ge, GaAs, InP, or GaP exhibit a
number of self-organization phenomena such as current oscillations in time and/or in space; …

Pore propagation during anodization of (100) n-InP electrodes in aqueous KOH was studied
in detail by scanning and transmission electron microscopy (SEM and TEM). Pores …

In this paper, electrochemical and optical characterizations of anodic porous n-InP (100) are
reported. The direct relation between the observed pore morphology and the physical …

This book focuses on nanostructured semiconductors, their fabrication, and their application
in various fields such as optics, acoustics, and biomedicine. It presents a compendium of …