Low-temperature direct bonding of β-Ga2O3 and diamond substrates under atmospheric conditions
T Matsumae, Y Kurashima, H Umezawa… - Applied Physics …, 2020 - pubs.aip.org
Surface-functionalized β-Ga 2 O 3 and diamond substrates were directly bonded by
annealing at 250 C in atmospheric air. Prior to bonding, the β-Ga 2 O 3 and diamond …
annealing at 250 C in atmospheric air. Prior to bonding, the β-Ga 2 O 3 and diamond …
Progress in the semiconductor/diamond heterogeneous integrations: Technical methods, interfacial phonon transport, and thermal characterizations
X Zhao, W Hu - Surfaces and Interfaces, 2024 - Elsevier
Excellent physical properties of wide and ultrawide bandgap semiconductor materials have
significantly advanced the miniaturization of high-power devices, radio frequency devices …
significantly advanced the miniaturization of high-power devices, radio frequency devices …
[PDF][PDF] 氧等离子体活化β-Ga2O3/SiO2 低温键合工艺
马旭， 穆文祥， 侯童， 董岳， 余博文， 李阳… - Journal of the Chinese …, 2024 - researching.cn
采用O2 等离子体活化键合技术, 实现了β-Ga2O3 与SiO2 的低温直接键合. 通过对O2
等离子体处理时间进行调控, 系统研究了接触角, 羟基密度随处理时间的变化. 随着O2 …
等离子体处理时间进行调控, 系统研究了接触角, 羟基密度随处理时间的变化. 随着O2 …
SiN used as a Stressor in Germanium-On-Insulator Substrate
S Duangchan, K Yamamoto, D Wang… - 2019 International …, 2019 - ieeexplore.ieee.org
This research aims to show the advantage of using silicon nitride as a stressor in a strained
germanium-on-insulator substrate (strained Ge). A Si substrate is patterned on the surface …
germanium-on-insulator substrate (strained Ge). A Si substrate is patterned on the surface …