SiO 2 thin film growth through a pure atomic layer deposition technique at room temperature
In this study, less contaminated and porous SiO2 films were grown via ALD at room
temperature. In addition to the well-known catalytic effect of ammonia, the self-limitation of …
temperature. In addition to the well-known catalytic effect of ammonia, the self-limitation of …
Thermal stress control of the polymorphic transformation in MnTe semiconductor films
The polymorphic transformation of the compound MnTe between its wurtzite-type (β) and
nickeline-type (α) crystalline phase results in a significant change in its physical properties …
nickeline-type (α) crystalline phase results in a significant change in its physical properties …
Investigation of silicon nitride for spacer via plasma-enhanced atomic layer deposition using a (tert-butylamino) dimethylsilane precursor
CY Park, HL Yang, HM Kim, D Kim, Y Park, J Park… - Applied Surface …, 2024 - Elsevier
Silicon nitride (SiN x) has attracted considerable attention as a spacer in advanced
semiconductor devices, owing to its superior barrier performance. However, the fabrication …
semiconductor devices, owing to its superior barrier performance. However, the fabrication …