Dry processing based on reactive plasmas was the main driven force for micro-and recently
nano-electronic industry. Once with the increasing in plasma complexity new diagnostics …

For unmagnetized low temperature Ar plasmas with plasma density ranging from 3× 10 8 to
10 10 cm− 3 and an electron temperature of∼ 1 eV, the expansion of the ion collecting area …

This paper deals with a pulsed biasing technique employed to a downstream expanding
thermal plasma. Two pulsed biasing approaches are presented: asymmetric rectangular …

The structure of the plasma sheath around a thin, circular disc biased below the plasma
potential is calculated assuming cold, collisionless, unmagnetized ions and Boltzmann …

The structure of an electronegative discharge is investigated in the presence of an oblique,
uniform, and constant magnetic field. For different magnetic field strengths, the densities of …

Negative ion production is investigated in a chamber with transversal magnetic filter
operated in dc or inductively coupled plasma (ICP) modes in Ar/SF 6 gas mixtures. Plasma …

The structure of the sheath and the current exchange of two-dimensional electron-emitting
objects with elliptic cross section immersed at rest in Maxwellian plasmas are investigated …

Highly electronegative plasmas were produced in Ar/SF 6 gas mixtures in a dc discharge
with multipolar magnetic confinement and transversal magnetic filter. Langmuir probe and …

A large area plasma source based on 12 multi-dipolar ECR plasma cells arranged in a 3× 4
matrix configuration was built and optimized for silicon etching by negative ions. The density …

This experimental study shows the validity of Sheridan's method in determining plasma
density in low pressure, weakly magnetized, RF plasmas using ion saturation current data …