Injection of Surface Plasmon Induced Hot Carriers Into the Wide Band Gap Semiconductor Gallium Nitride
P Wagle - 2023 - search.proquest.com
The injection of Surface plasmon polariton (SPP) induced hot carriers into semiconducting
film has potential applications in the field of optoelectronics. Gallium Nitride (GaN) is the …
film has potential applications in the field of optoelectronics. Gallium Nitride (GaN) is the …
[PDF][PDF] Effects of NH3 pre-treatment time on nitrogen-polar GaN grown on carbon-face 4H-SiC using high-temperature metal-organic chemical vapor deposition
We investigated the effects of NH3 pretreatment time on N-polar GaN grown on 4 o off-cut C-
face 4H-SiC using high temperature metal-organic chemical vapor deposition. The NH3 pre …
face 4H-SiC using high temperature metal-organic chemical vapor deposition. The NH3 pre …