Real-time three-dimensional reciprocal space mapping (3D-RSM) measurement during In
0.12 Ga 0.88 As/GaAs (001) molecular beam epitaxial growth has been performed to …

Photoluminescence (PL) at wavelengths over 1.55 μm from self-assembled InAs quantum
dots (QDs) grown on GaAs (001) is observed at room temperature (RT) and 4 K using a …

Strain relaxation in a GaInN/GaN heterostructure is analyzed by combining in situ X‐ray
diffraction (XRD) monitoring and ex situ observations. Two different characteristic …

Growth of InAs quantum dots (QDs) in metamorphic InGaAs matrix for long‐wavelength laser
applications on GaAs substrates by molecular beam epitaxy (MBE) is demonstrated …

The structural, optical and morphological properties of Ga-rich Ga x In 1− x P layers with
various gallium compositions grown on epi-ready semi-insulating (100)-oriented GaAs …

Growth temperature dependence of strain relaxation during In0. 12Ga0. 88As/GaAs (001)
molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of …

We analyzed a number of complicated X-ray diffraction patterns using feature patterns
obtained through unsupervised machine learning. A crystalline SiGe film on a Si substrate …

A molecular beam epitaxy (MBE) chamber dedicated to nitride growth was developed at the
synchrotron radiation facility SPring-8. This chamber has two beryllium windows for incident …

An experimental approach to crystal growth dynamics using surface-sensitive X-ray
diffraction techniques is discussed. In crystal growth, two essentially different kinds of …

Strain relaxation of In x Ga 1− x As/GaAs (001) with systematically changed In content
between x= 0.23 and x= 0.80 has been studied using in situ synchrotron X-ray diffraction …