Method of forming a split gate memory device and apparatus
BA Winstead, RA Rao, SE Williams - US Patent 7,795,091, 2010 - Google Patents
A split-gate memory device has a select gate having a first work function overlying a first
portion of a substrate. A control gate having a second work function overlies a second …
portion of a substrate. A control gate having a second work function overlies a second …
氧化鋁/二氧化鉿交錯層應用於非揮發性記憶體特性研究
蔡依成， 崔秉鉞 - 2009 - ir.lib.nycu.edu.tw
本論文提出以原子層沉積法沉積氧化鋁/二氧化鉿交錯層作為快閃式非揮發性記憶體的電荷儲存
層. 製作的電容結構以及薄膜電晶體結構, 採用高介電常數材料氧化鋁作為電荷阻擋層 …
層. 製作的電容結構以及薄膜電晶體結構, 採用高介電常數材料氧化鋁作為電荷阻擋層 …
多閘極氮化鈦奈米晶粒非揮發性記憶體之研究
羅正愷， 崔秉鉞 - 2007 - ir.lib.nycu.edu.tw
在本論文中, 我們提出一個在SOI 晶片上的N 型通道氮化鈦(TiN) 奈米晶粒非揮發性記憶體的捕
陷電荷層設計. 採用P 型参雜的多晶矽閘極和高K 值的阻隔介電層分別是為了降低抹除時的背向 …
陷電荷層設計. 採用P 型参雜的多晶矽閘極和高K 值的阻隔介電層分別是為了降低抹除時的背向 …
A New Self-Aligned NAND Type SONOS Flash Memory with High Scaling Abilities, Fast Programming/Erase Speeds and Good Data Retention Performances
VCW Kuo, ECS Yang, WZ Wong… - 2006 7th Annual …, 2006 - ieeexplore.ieee.org
In this paper, we will propose a new NAND type SONOS cell structure with high efficiency
Source Side Injection programming and FN erase. This cell is characterized in high scaling …
Source Side Injection programming and FN erase. This cell is characterized in high scaling …