Compound fault diagnosis of gearboxes via multi-label convolutional neural network and wavelet transform

P Liang, C Deng, J Wu, Z Yang, J Zhu, Z Zhang - Computers in Industry, 2019 - Elsevier
Gearboxes are the most widely used elements for transferring speed and power in many
industrial machines. High-precision gearbox fault diagnosis is quite significant for keeping …

Versatile stochastic dot product circuits based on nonvolatile memories for high performance neurocomputing and neurooptimization

MR Mahmoodi, M Prezioso, DB Strukov - Nature communications, 2019 - nature.com
The key operation in stochastic neural networks, which have become the state-of-the-art
approach for solving problems in machine learning, information theory, and statistics, is a …

Exploring Area-Dependent Pr0.7Ca0.3MnO3-Based Memristive Devices as Synapses in Spiking and Artificial Neural Networks

A Gutsche, S Siegel, J Zhang, S Hambsch… - Frontiers in …, 2021 - frontiersin.org
Memristive devices are novel electronic devices, which resistance can be tuned by an
external voltage in a non-volatile way. Due to their analog resistive switching behavior, they …

[HTML][HTML] PrxCa1− xMnO3 based stochastic neuron for Boltzmann machine to solve “maximum cut” problem

D Khilwani, V Moghe, S Lashkare, V Saraswat… - APL Materials, 2019 - pubs.aip.org
The neural network enables efficient solutions for Nondeterministic Polynomial-time (NP)
hard problems, which are challenging for conventional von Neumann computing. The …

Realizing spike-timing dependent plasticity learning rule in Pt/Cu: ZnO/Nb: STO memristors for implementing single spike based denoising autoencoder

B Suresh, PKR Boppidi, BP Rao… - Journal of …, 2019 - iopscience.iop.org
In this work, the Cu: ZnO based memristors were fabricated and modelled and its biological
synaptic characteristics were realized. Phenomenon similar to long-term potentiation and …

Vacancy-induced resistive switching and synaptic behavior in flexible BST@ Cf memristor crossbars

Z Wang, J Yue, C Jiang, I Abrahams, Y Yu, Y Li… - Ceramics …, 2020 - Elsevier
In this study, carbon fibers (C f) coated with Ba 0. 6 Sr 0. 4 TiO 3 (BST)(BST@ C f) were
prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen …

Software-level accuracy using stochastic computing with charge-trap-flash based weight matrix

V Bhatt, S Shrivastava, T Chavan… - 2020 International Joint …, 2020 - ieeexplore.ieee.org
The in-memory computing paradigm with emerging memory devices has been recently
shown to be a promising way to accelerate deep learning. Resistive processing unit (RPU) …

Efficient and robust bitstream processing in binarised neural networks

S Aygun, EO Gunes, C De Vleeschouwer - Electronics Letters, 2021 - Wiley Online Library
In the neural network context, used in a variety of applications, binarised networks, which
describe both weights and activations as single‐bit binary values, provide computationally …

C–N-codoped Sb2Te3 chalcogenides for reducing writing current of phase-change devices

Y Yin, W Matsuhashi, K Niiyama, J Yang… - Applied Physics …, 2020 - pubs.aip.org
In this work, doping C and codoping C and N into the Sb 2 Te 3 traditional chalcogenide
were investigated to reduce the writing current of the phase-change device using a …

Highly Deterministic One-Shot Set–Reset Programming Scheme in PCMO Resistive Random-Access Memory

O Phadke, V Saraswat, U Ganguly - ACS Applied Electronic …, 2022 - ACS Publications
Resistive random-access memory (RRAM) devices are very versatile with applications
ranging from digital nonvolatile memories to analog synapses and integrate-fire neurons …