Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
Dawn of nitride ferroelectric semiconductors: from materials to devices
III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …
been extensively investigated in the past decades. New functionalities, such as …
Bidirectional photocurrent in p–n heterojunction nanowires
Semiconductor p–n junctions provide rectification behaviour and act as building blocks in
many electronic devices. However, the typical junction configuration restricts the potential …
many electronic devices. However, the typical junction configuration restricts the potential …
The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Molecular beam epitaxy and characterization of wurtzite ScxAl1− xN
We demonstrate the growth of pure wurtzite phase Sc x Al 1− x N with a Sc composition as
high as x= 0.34 on GaN and AlN templates using plasma-assisted molecular beam epitaxy …
high as x= 0.34 on GaN and AlN templates using plasma-assisted molecular beam epitaxy …
[HTML][HTML] Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters
R Kudrawiec, D Hommel - Applied Physics Reviews, 2020 - pubs.aip.org
A key material system for opto-and high-power electronics are III-nitrides. Their functionality
can be expanded when bandgap engineering is extended beyond common materials such …
can be expanded when bandgap engineering is extended beyond common materials such …
Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer
Z Xing, F Wang, Y Wang, JJ Liou, Y Liu - Optics Express, 2022 - opg.optica.org
Aluminum-rich p-AlGaN electron blocking layers (EBLs) are typically used for preventing
overflow of electrons from the active region in AlGaN-based deep ultraviolet (DUV) laser …
overflow of electrons from the active region in AlGaN-based deep ultraviolet (DUV) laser …
Band alignment of orthorhombic Ga2O3 with GaN and AlN semiconductors
Ga 2 O 3 semiconductors have attracted tremendous research interests because of their
fascinating material properties for future-generation energy, electronic, and optoelectronic …
fascinating material properties for future-generation energy, electronic, and optoelectronic …
Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials
Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …
Natural band alignment of BAlN and BGaN alloys
The natural band alignment of BAlN and BGaN alloys was investigated using the atomic
solid-state energy scale approach. The band edge positions relative to the vacuum level …
solid-state energy scale approach. The band edge positions relative to the vacuum level …