As CMOS technology begins to face significant scaling challenges, considerable research
efforts are being directed to investigate alternative device technologies that can serve as a …

Spin-transfer torque magnetic memory (STT-MRAM) has gained significant research interest
due to its nonvolatility and zero standby leakage, near unlimited endurance, excellent …

Through recent advances, the relevance of magnetic tunnel junctions (MTJs) to the
microelectronics industry continues to rise. However, their reversal speed still suffers from …

Due to the globalization of Integrated Circuit (IC) design in the semiconductor industry and
the outsourcing of chip manufacturing, Third-Party Intellectual Properties (3PIPs) become …

The magnetization switching dynamics of the free layer in the pentalayer nanopillar is
studied by numerically solving the dynamical equation governed by the Landau–Lifshitz …

The new generation of spintronic devices, Hybrid Spintronic-CMOS devices including
Magnetic Tunnel Junction (MTJ), have been utilized to overcome Moore's law limitation as …

With the shrinking of CMOS (complementary metal oxide semi-conductor) technology, static
and dynamic power increase dramatically and indeed has become one of the main …

All-Spin Logic (ASL) devices provide a promising spintronics-based alternative for Boolean
logic implementations in the post-Complementary Metal-Oxide Semiconductor (CMOS) era …

We present our findings on how orange peel coupling (OPC) between the ferromagnetic
layers affects spin transfer torque-assisted magnetization reversal dynamics in CoPt, CoFeB …

As the traditional CMOS technology encounters significant scaling challenges, many
emerging beyond-CMOS devices have been proposed and developed to augment or even …