Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) are
regarded as the key device for the next generation of power electronics. However, wide …

We present a new, simplified, pulsed-gate stress test approach to determine the electrical
parameter stability of SiC MOSFETs under application-like conditions over a lifetime. By …

Bias temperature instability (BTI) is a well-investigated degradation mechanism in
technologies based on silicon, gallium nitride, or silicon carbide (SiC). Essentially, it leads to …

Several important aspects related to the phenomena of ac gate-bias stress-induced
threshold-voltage degradation in SiC MOSFETs are presented. These include a detailed …

Gate-oxide degradation has been one of the major reliability challenges of SiC mosfet s.
Comprehensive and accurate localization of gate-oxide degradation under bias temperature …

Real-time degradation monitoring (DM) of the gate oxide is an effective method to improve
the reliability of SiC mosfet applications. Currently, the existing DM methods generally …

We investigated the effect of nitrogen–hydrogen (NH) mixed plasma pretreatment of 4H–SiC
surfaces on SiC surface properties, SiO2/SiC interface quality, and the reliability and voltage …

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are
becoming increasingly important in numerous renewable energy applications that inherently …

While silicon carbide power mosfet s have significantly superior figures-of-merit in
comparison to conventional silicon devices, they have seen relatively limited adoption in …

In the context of renewable energy generation, compact and efficient electric power
conversion is becoming increasingly important. Due to their low-loss switching capability at …