Recently developed high-permittivity (k) materials have reopened the door to Ge as a
channel material in metal-oxide-semiconductor field-effect transistors (MOSFETs). High-k/Ge …

Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel
material (offering a mobility gain of approximately× 2 for electrons and× 4 for holes when …

The use of atomic layer deposition (ALD) to form a semicon ductor structure of a silicon film
on a germanium Substrate is disclosed. An embodiment includes a tantalum nitride gate …

Scaling of the gate stack has been a key to enhancing the performance of complementary
metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) of past technology …

This paper reviews progress and current critical issues with respect to the integration of
germanium (Ge) surface-channel MOSFET devices as well as strained-Ge buried-channel …

Sulfur passivation of Ge (100) is achieved using aqueous ammonium sulfide (NH 4) 2 S
(aq)⁠. The passivation layer is largely preserved after atomic layer deposition of the high-κ …

We report a study on Ge diffusion and its impact on the electrical properties of Ta N∕ Hf O
2∕ Ge metal-oxide-semiconductor (MOS) device. It is found that Ge diffusion depends on …

Germanium (Ge), with its higher hole and electron mobility than silicon, is a promising
candidate to replace silicon for future complementary metal-oxide-semiconductor (CMOS) …

With scaling of the gate length downward to increase speed and density, the gate dielectric
thickness must also be reduced. However, this practice which has been in effect for many …

Appropriate Ge surface control and resulting formation of Ge MIS interfaces with superior
interface properties are one of the most critical issues in realizing high performance Ge …