Hot Electron Dynamics in InAs–AlAsSb Core–Shell Nanowires
D Sandner, H Esmaielpour, F Giudice… - ACS Applied Energy …, 2023 - ACS Publications
Semiconductor nanowires (NWs) have shown evidence of robust hot-carrier effects due to
their small dimensions, making them attractive for advanced photoenergy conversion …
their small dimensions, making them attractive for advanced photoenergy conversion …
Crystal structure analysis of self-catalyzed InAs nanowire grown by MOCVD
X Wang, H Pan, X Yang, T Yang - Journal of Alloys and Compounds, 2024 - Elsevier
We studied the crystal structure of self-catalyzed InAs nanowires with different diameters
grown on Si Substrate by metal-organic chemical vapor deposition (MOCVD) and found that …
grown on Si Substrate by metal-organic chemical vapor deposition (MOCVD) and found that …
[PDF][PDF] InPBi 禁带下红外光致发光效率的Bi 组分依赖研究
杨自力， 王嫚， 余灯广， 朱亮清， 邵军， 陈熙仁 - 红外与毫米波学报, 2023 - researching.cn
稀Bi 半导体InPBi 的光致发光(Photoluminescence, PL) 主要来自缺陷能级跃迁过程,
具有红外长波长, 大线宽和高辐射强度等特点, 因而引发广泛兴趣. 针对InPBi …
具有红外长波长, 大线宽和高辐射强度等特点, 因而引发广泛兴趣. 针对InPBi …
Bi composition-dependent study of infrared photoluminescence efficiency in InPBi bandgap
杨自力， 王嫚， 余灯广， 朱亮清， 邵军… - Journal of Infrared and …, 2023 - journal.sitp.ac.cn
稀 Bi 半导体 InPBi 的光致发光 (Photoluminescence, PL) 主要来自缺陷能级跃迁过程,
具有红外长波长, 大线宽和高辐射强度等特点, 因而引发广泛兴趣. 针对 InPBi …
具有红外长波长, 大线宽和高辐射强度等特点, 因而引发广泛兴趣. 针对 InPBi …