Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-based solar cells
III-nitride InGaN material is an ideal candidate for the fabrication of high performance
photovoltaic (PV) solar cells, especially for high-temperature applications. Over the past …
photovoltaic (PV) solar cells, especially for high-temperature applications. Over the past …
Solar cells operating under thermal stress
Operating a solar cell under thermal stress at temperatures> 100° C and up to 500° C seems
counterintuitive because conversion efficiency drops dramatically. Even so, there are cases …
counterintuitive because conversion efficiency drops dramatically. Even so, there are cases …
Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron-and hole-blocking layers
In this paper, we perform a comprehensive study on energy band engineering of InGaN
multi-quantum-well (MQW) solar cells using AlGaN electron-and hole-blocking layers …
multi-quantum-well (MQW) solar cells using AlGaN electron-and hole-blocking layers …
High-temperature polarization-free III-nitride solar cells with self-cooling effects
High-temperature photovoltaics (PV) for terrestrial and extraterrestrial applications have
presented demanding challenges for current solar cell materials, such as Si, III–V AlGaInP …
presented demanding challenges for current solar cell materials, such as Si, III–V AlGaInP …
Characterizations of the nonlinear optical properties for (010) and (2 01) beta-phase gallium oxide
We report, for the first time, the characterizations on optical nonlinearities of beta-phase
gallium oxide (β-Ga_2O_3), where both (010) β-Ga_2O_3 and (2¯ 01) β-Ga_2O_3 were …
gallium oxide (β-Ga_2O_3), where both (010) β-Ga_2O_3 and (2¯ 01) β-Ga_2O_3 were …
[PDF][PDF] Accurate model for temperature dependence of solar cell performance according to phonon energy correction
In many experiments, it has been reported that the performance of solar cells decreases with
increasing temperature. This effect arises due to an increase in the intrinsic carrier …
increasing temperature. This effect arises due to an increase in the intrinsic carrier …
Impact of current-induced degradation process on the electro-optical characteristics of InGaN/GaN multiple-quantum-well photodetectors fabricated on sapphire …
P Dalapati, K Yamamoto, T Egawa… - Applied Physics Letters, 2021 - pubs.aip.org
The impact of defects on the degradation behaviors of InGaN/GaN multiple-quantum-well
photodetectors submitted to dc current stress has been intensively studied. The root …
photodetectors submitted to dc current stress has been intensively studied. The root …
High-Efficiency InGaN Photo Cell Irradiated by 532 nm Laser with AlGaN Electron Blocking Layer
HS Shan, SW Liu, N Wang, XY Li - ECS Journal of Solid State …, 2023 - iopscience.iop.org
In this paper, a high-efficiency InGaN photo cell irradiated by 532 nm laser (at green
wavelength) with AlGaN electron blocking layer (EBL) is proposed based on the blue-green …
wavelength) with AlGaN electron blocking layer (EBL) is proposed based on the blue-green …
Current-induced degradation behaviors of InGaN/GaN multiple quantum well UV photodetectors: Role of electrically active defects
P Dalapati, A Almalki, S Alhassan, S Alotaibi… - Sensors and Actuators A …, 2022 - Elsevier
To examine the critical role of electrically active defects and surface states in InGaN/GaN
multiple quantum well (MQW) ultraviolet photodetectors (UV-PDs), the study of degradation …
multiple quantum well (MQW) ultraviolet photodetectors (UV-PDs), the study of degradation …
Optically induced degradation due to thermally activated diffusion in GaN-based InGaN/GaN MQW solar cells
M Nicoletto, A Caria, C De Santi… - … on Electron Devices, 2023 - ieeexplore.ieee.org
We extensively investigate the degradation of gallium nitride (GaN)-based high periodicity
indium GaN (InGaN)-GaN multiple quantum well (MQW) solar cells submitted to optical …
indium GaN (InGaN)-GaN multiple quantum well (MQW) solar cells submitted to optical …