Porous crystalline materials for memories and neuromorphic computing systems

G Ding, JY Zhao, K Zhou, Q Zheng, ST Han… - Chemical Society …, 2023 - pubs.rsc.org
Porous crystalline materials usually include metal–organic frameworks (MOFs), covalent
organic frameworks (COFs), hydrogen-bonded organic frameworks (HOFs) and zeolites …

Memristor-based artificial chips

B Sun, Y Chen, G Zhou, Z Cao, C Yang, J Du, X Chen… - ACS …, 2023 - ACS Publications
Memristors, promising nanoelectronic devices with in-memory resistive switching behavior
that is assembled with a physically integrated core processing unit (CPU) and memory unit …

Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer

Y Li, ZC Zhang, J Li, XD Chen, Y Kong… - Nature …, 2022 - nature.com
The explosion in demand for massive data processing and storage requires revolutionary
memory technologies featuring ultrahigh speed, ultralong retention, ultrahigh capacity and …

Metaplastic and energy-efficient biocompatible graphene artificial synaptic transistors for enhanced accuracy neuromorphic computing

D Kireev, S Liu, H Jin, T Patrick Xiao… - Nature …, 2022 - nature.com
CMOS-based computing systems that employ the von Neumann architecture are relatively
limited when it comes to parallel data storage and processing. In contrast, the human brain …

Nanoelectronics Using Metal–Insulator Transition

YJ Lee, Y Kim, H Gim, K Hong, HW Jang - Advanced Materials, 2024 - Wiley Online Library
Metal–insulator transition (MIT) coupled with an ultrafast, significant, and reversible resistive
change in Mott insulators has attracted tremendous interest for investigation into next …

A self-rectifying synaptic memristor array with ultrahigh weight potentiation linearity for a self-organizing-map neural network

H Zhang, B Jiang, C Cheng, B Huang, H Zhang… - Nano Letters, 2023 - ACS Publications
Two-terminal self-rectifying (SR)-synaptic memristors are preeminent candidates for high-
density and efficient neuromorphic computing, especially for future three-dimensional …

From spintronic memristors to quantum computing

J Qin, B Sun, G Zhou, T Guo, Y Chen, C Ke… - ACS Materials …, 2023 - ACS Publications
The high-speed development of the Internet of Things and artificial intelligence is
revolutionizing the world in terms of industrial production, environmental protection, medical …

Programming memristor arrays with arbitrarily high precision for analog computing

W Song, M Rao, Y Li, C Li, Y Zhuo, F Cai, M Wu, W Yin… - Science, 2024 - science.org
In-memory computing represents an effective method for modeling complex physical
systems that are typically challenging for conventional computing architectures but has been …

Multi-factor-controlled ReRAM devices and their applications

B Sun, G Zhou, T Yu, Y Chen, F Yang… - Journal of Materials …, 2022 - pubs.rsc.org
Resistive random access memory (ReRAM) based on a resistive switching (RS) effect is a
new type of non-volatile memory device that stores information based on the reversible …

Multi‐Functional Platform for In‐Memory Computing And Sensing Based on 2D Ferroelectric Semiconductor α‐In2Se3

X Li, S Li, J Tian, F Lyu, J Liao… - Advanced Functional …, 2024 - Wiley Online Library
Abstract 2D layered semiconductors with excellent light− matter interaction and atomic‐
scale thickness have been envisioned as promising candidates for more than Moore and …