Interactions of 3D mask effects and NA in EUV lithography
JT Neumann, P Gräupner, W Kaiser… - Photomask …, 2012 - spiedigitallibrary.org
With high NA (> 0.33), and the associated higher angles of incidence on the reflective EUV
mask, mask induced effects will significantly impact the overall scanner-performance. We …
mask, mask induced effects will significantly impact the overall scanner-performance. We …
Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio
JT Neumann, P Gräupner, W Kaiser… - … (EUV) Lithography IV, 2013 - spiedigitallibrary.org
With higher NA (≫ 0.33) and increased chief-ray-angles, mask effects will significantly
impact the overall scanner performance. We discuss these effects in detail, paying particular …
impact the overall scanner performance. We discuss these effects in detail, paying particular …
Update on optical material properties for alternative EUV mask absorber materials
F Scholze, C Laubis, KV Luong… - 33rd European Mask …, 2017 - spiedigitallibrary.org
The application of EUV lithography at the 7 nm node and below requires, among others, to
reduce 3D mask effects 1 like shadowing eg by introducing a thinner absorber structure. A …
reduce 3D mask effects 1 like shadowing eg by introducing a thinner absorber structure. A …
Actinic EUV scatterometry for parametric mask quantification
S Sherwin, A Neureuther… - Extreme Ultraviolet (EUV) …, 2018 - spiedigitallibrary.org
There are many applications where fast, accurate light scattering from EUV photomasks
must be computed, including inverse mask design, actinic die-to-database inspection, and …
must be computed, including inverse mask design, actinic die-to-database inspection, and …
EUV mask characterization with actinic scatterometry
S Sherwin, A Neureuther… - … Conference on Extreme …, 2018 - spiedigitallibrary.org
With EUV Lithography rapidly approaching maturity, accurate metrology to thoroughly
characterize EUV photomasks is needed. We present an actinic EUV reflection-based …
characterize EUV photomasks is needed. We present an actinic EUV reflection-based …