GaSe appears to be a possible candidate material for optical frequency conversion in the
near to far infrared (1–18 μm) wavelength. Various properties of this material are important …

Van der Waals growth of GaAs on silicon using a two‐dimensional layered material,
graphene, as a lattice mismatch/thermal expansion coefficient mismatch relieving buffer …

The growth of two-dimensional layered chalcogenides on two-or three-dimensional
substrates, named (quasi) van der Waals epitaxy, has been pioneered by the group of A …

We report on a phenomenon, where thin films sputter-deposited on single-crystalline Al2O3
(0001) substrates exposed to borazine─ a precursor commonly used for the synthesis of …

The layered chalcogenides are considered to be prototypes of two-dimensional (2D)
inorganic materials. Their basic structural, electronic and physical properties have …

Optical absorption spectra of 9 MeV electron-irradiated GaSe crystals were studied. Two
absorption bands with the low-photon-energy threshold at 1.35 and 1.73 eV (T= 300 K) …

ZnSe has been grown on van der Waals surfaces of the layered chalcogenides InSe and
GaSe. Its growth morphology, epitaxial relation and electronic band lineup were studied …

The preparation of crystalline materials on incommensurate substrates has been a key topic
of epitaxy. van der Waals (vdW) epitaxy on two-dimensional (2D) materials opened novel …

Epitaxial films of Wurtzite CdS in (0001) orientation have been grown on MoTe,(0001)
substrates in spite of a lattice mismatch of 15%. The film growth was in situ monitored by soft …

GaSe thin films were grown on a GaAs (100) substrate by molecular beam epitaxy.
Microstructures of the thin films and interface were characterized by transmission electron …