Abstract Magnetic Tunnel Junctions (MTJ) are employed in a range of technologies such as
data storage, sensing, and so on due to their compact nature and high field sensitivity. In …

Advanced machine learning techniques have unfurled their applications in various
interdisciplinary areas of research and development. This paper highlights the use of image …

Synthetic antiferromagnets (SAFs) with perpendicular magnetic anisotropy (PMA) have
recently attracted intensive attention for their potential applications in domain-wall-based …

The perpendicularly magnetized synthetic antiferromagnets (SAFs) are expected to be ideal
materials for magnetic random-access memory (MRAM) due to the low cross-talk noise and …

Ion bombardment is currently an active area of research for patterning rare earth/transition
metal ferrimagnetic thin films because the magnetic properties are extremely sensitive to …

Modifications of magnetic and magneto-optical properties of Pt/Co (d Co)/Pt upon Ar+
irradiation (with energy 1.2, 5 and 30 keV) and fluence, F at the range from 2· 10 13–2· 10 16 …

Abstract The X/Co 3 nm/Y (where X, Y= Au, Pt) trilayers with as deposited in-plane
magnetization alignment were irradiated with 30 keV Ga+ ions in the wide range of ion …

Spintronic devices promise significant improvement over current CMOS-based technology in
terms of efficiency, speed, and energy consumption for applications such as data storage …

The influence of 30 keV Ga+ ion irradiation in the fluence range 0÷ 1· 10 16 ions/cm 2 on
magnetic properties of Pt (bottom)/Co (3 nm)/Au (top) trilayers grown by the molecular beam …

Focused ion beam (FIB) irradiation was applied to an ultrathin Pt/Co/Pt film to create
micrometer-sized, square-shaped regions with perpendicular orientation of magnetization …