An integrated circuit includes a FinFET and a nanostructure FET. The integrated circuit
includes a bulk substrate. The integrated circuit also includes a fin field effect transistor …

Provided are photoelectric devices and electronic appara tuses including the photoelectric
devices. A photoelectric device may include a photoactive layer, the photoactive layer may …

Structures and methodologies to obtain lasing in indirect gap semiconductors such as Ge
and Si are provided and involves excitonic transitions in the active layer comprising of at …

According to example embodiments, a graphene switching devices has a tunable barrier.
The graphene switching device may include a gate substrate, a gate dielectric on the gate …

This CIP application builds on Ge quantum dot superlattice (QDSL) based field effect
transistors where Ge quantum dot arrays are used as a high carrier mobility channel. The …

0004 2. Description of the Related Art 0005. As technology nodes for integrated circuits
scale below 10 nm, maintaining precise control of various electrical characteristics in bulk …

BACKGROUND The present application relates generally to semiconduc tor devices, and
more specifically to vertical nanowire devices and their methods of production. Modern …

Assistant Examiner—Dmitriy Yemelyanov (74) Attorney, Agent, or Firm—Seed IP Law Group
LLP (57) ABSTRACT Incorporation of metallic quantum dots (eg, silver bromide (AgBr) films) …

Energy bands of a thin film containing molecular clusters are tuned by controlling the size
and the charge of the clusters during thin film deposition. Using atomic layer deposition, an …

Incorporation of metallic quantum dots (eg, silver bromide (AgBr) films) into the source and
drain regions of a MOSFET can assist in controlling the transistor performance by tuning the …