Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

In the past decade, atomic layer deposition (ALD) has become an important thin film
deposition technique for applications in nanoelectronics, catalysis, and other areas due to its …

Perovskites exhibit a wide range of remarkable material properties that have the potential to
advance various scientific fields. These properties originate in their unique structure and …

A method of forming a dielectric material, comprising doping a zirconium oxide material,
using a dopant precursor selected from the group consisting of Ti (NMe 2) 4; Ti (NMeEt) 4; Ti …

US8859047B2 - Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
- Google Patents US8859047B2 - Use of ruthenium tetroxide as a precursor and reactant for …

Yttria-stabilized zirconia (YSZ) films were synthesized by atomic layer deposition (ALD).
Tetrakis (dimethylamido) zirconium and tris (methylcyclopentadienyl) yttrium were used as …

Advances in the fabrication of multicomponent oxide thin films are crucial to prepare specific
compositions with precise structures and controlled interfaces. This will enable the …

Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide
thin films with nanoscale thickness control. Most successful industrial applications have …

This feature article provides a progress review of atomic layer deposition (ALD) for
fabrication of oxide-ion as well as proton conducting ceramic fuel cells. A comprehensive …

Solid oxide fuel cells (SOFCs) are promising candidates for next-generation energy
conversion devices, and much effort has been made to lower their operating temperature for …