Effect of some physical perturbations and their interplay on Raman spectral line shapes in silicon: A brief review
Raman spectroscopy is a proven versatile tool for characterization of materials spanning
almost all areas of science because of its ability to non‐invasively extract information about …
almost all areas of science because of its ability to non‐invasively extract information about …
Effect of dimensionality on excitation wavelength dependence of Fano-Raman line-shape: a brief review
The already existing heterogeneity in nanomaterials makes it an intriguing yet complex
system to study size effect vis-à-vis other external perturbations and thereby local …
system to study size effect vis-à-vis other external perturbations and thereby local …
Influence of boron content on the morphological, spectral, and electroanalytical characteristics of anodically oxidized boron-doped diamond electrodes
K Schwarzová-Pecková, J Vosáhlová, J Barek… - Electrochimica …, 2017 - Elsevier
The effect of boron content in nanocrystalline anodically polarized boron doped diamond
(BDD) thin films deposited at B/C ratio 500 ppm–8000 ppm on their morphology, quality, and …
(BDD) thin films deposited at B/C ratio 500 ppm–8000 ppm on their morphology, quality, and …
Fano-Type Wavelength-Dependent Asymmetric Raman Line Shapes from MoS2 Nanoflakes
Excitation wavelength-dependent Raman spectroscopy has been carried out to study
electron–phonon interaction (Fano resonance) in multi-layered bulk 2H–MoS2 nano-flakes …
electron–phonon interaction (Fano resonance) in multi-layered bulk 2H–MoS2 nano-flakes …
Top-down fabrication of Ge nanowire arrays by nanoimprint lithography and hole gas accumulation in Ge/Si core–shell nanowires
Germanium (Ge) nanowire arrays are expected to be a promising channel material for high-
performance field-effect transistors (FETs) due to their excellent electronic transport …
performance field-effect transistors (FETs) due to their excellent electronic transport …
Laser-induced Fano asymmetry, electron-phonon coupling, and phase transition in lanthanide sesquioxide (Ln2O3; Ln= Eu, Gd, Dy) nanoparticles: A Raman …
S Bhattacharjee, KK Chattopadhyay - Journal of Applied Physics, 2022 - pubs.aip.org
Laser power-dependent Raman spectroscopy is deployed to probe Fano interference in
asymmetrically broadened T g modes and the associated line shift in three technologically …
asymmetrically broadened T g modes and the associated line shift in three technologically …
Enhancing Si-nanowire solar cell performance through fabrication and annealing optimization
The notable optical and electrical features of Si nanowires (SiNWs) outperform conventional
bulk silicon, including a large surface area, antireflective properties, and shorter carrier …
bulk silicon, including a large surface area, antireflective properties, and shorter carrier …
Laser‐induced Fano interference subsumed by electron–phonon coupling in orthorhombic KNbO3 nano‐bricks: An ab initio vibrational and Raman spectroscopic …
S Bhattacharjee… - Journal of Raman …, 2023 - Wiley Online Library
Hydrothermally prepared potassium niobate (KNbO3) nanoparticles are characterized
meticulously to explore various crystallographic, microstructural, morphological, optical …
meticulously to explore various crystallographic, microstructural, morphological, optical …
Pseudo-anomalous size-dependent electron–phonon interaction in graded energy band: solving the Fano paradox
Quantum size effects on interferons (electron–phonon bound states), confined in fractal
silicon (Si) nanostructures (NSs), have been studied by using Raman spectromicroscopy. A …
silicon (Si) nanostructures (NSs), have been studied by using Raman spectromicroscopy. A …
Minimizing isolate catalyst motion in metal-assisted chemical etching for deep trenching of silicon nanohole array
The instability of isolate catalysts during metal-assisted chemical etching is a major
hindrance to achieve high aspect ratio structures in the vertical and directional etching of …
hindrance to achieve high aspect ratio structures in the vertical and directional etching of …