Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

A Chakraborty, BA Haskell, S Keller, JS Speck… - US Patent …, 2007 - Google Patents
A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as
nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition …

Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy

BA Haskell, MB McLaurin, SP DenBaars… - US Patent …, 2011 - Google Patents
(57) ABSTRACT A method of growing highly planar, fully transparent and specular m-plane
gallium nitride (GaN) films. The method provides for a significant reduction in structural …

Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy

BA Haskell, MB Mclaurin, SP Denbaars… - US Patent …, 2007 - Google Patents
(57) ABSTRACT A method of growing highly planar, fully transparent and specular m-plane
gallium nitride (GaN) films. The method provides for a significant reduction in structural …

Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy

BA Haskell, MD Craven, PT Fini, SP Denbaars… - US Patent …, 2007 - Google Patents
6,180,270 B1 1/2001 Cole et al. 6,268,621 B1 7/2001 Emmi et al. 6,350,666 B2 2/2002
Kryliouk 6,413,627 B1 7/2002 Motoki et al. 6,441,391 B1 8, 2002 Ohno et al. 6,468,882 B2 …

Semi-insulating GaN and method of making the same

RP Vaudo, X Xu, GR Brandes - US Patent 7,170,095, 2007 - Google Patents
US7170095B2 - Semi-insulating GaN and method of making the same - Google Patents
US7170095B2 - Semi-insulating GaN and method of making the same - Google Patents …

Dislocation reduction in non-polar gallium nitride thin films

MD Craven, SP DenBaars, JS Speck - US Patent 6,900,070, 2005 - Google Patents
Lateral epitaxial overgrowth of non-polar (11 {overscore (2)} 0) a-plane GaN seed layers
reduces threading dislocations in the GaN films. First, a thin patterned dielectric mask is …

Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AIN and their alloys by metal organic chemical vapor deposition

S Keller, UK Mishra, NA Fichtenbaum - US Patent 7,566,580, 2009 - Google Patents
(54) METHOD FOR HETEROEPITAXIAL 6,051,849 A 4/2000 Davis et a1. GROWTH OF
HIGH-QUALITY N-FACE GAN, 6,064,078 A 5/2000 Northrup et a1, INN, AND AIN AND …

Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy

BA Haskell, PT Fini, S Matsuda, MD Craven… - US Patent …, 2008 - Google Patents
US7427555B2 - Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy -
Google Patents US7427555B2 - Growth of planar, non-polar gallium nitride by hydride vapor …

Method for heteroepitaxial growth of high-quality N-face gallium nitride, indium nitride, and aluminum nitride and their alloys by metal organic chemical vapor …

S Keller, UK Mishra, NA Fichtenbaum - US Patent 8,455,885, 2013 - Google Patents
Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown
by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the …

Growth of reduced dislocation density non-polar gallium nitride

BA Haskell, MD Craven, PT Fini, SP DenBaars… - US Patent …, 2010 - Google Patents
US7847293B2 - Growth of reduced dislocation density non-polar gallium nitride - Google
Patents US7847293B2 - Growth of reduced dislocation density non-polar gallium nitride …