Metal-induced layer exchange of group IV materials
K Toko, T Suemasu - Journal of Physics D: Applied Physics, 2020 - iopscience.iop.org
Layer exchange (LE) is an interesting phenomenon in which metal and semiconductor
layers exchange during heat treatment. A great deal of effort has been put into research on …
layers exchange during heat treatment. A great deal of effort has been put into research on …
Adhesion and friction properties of micro/nano-engineered superhydrophobic/hydrophobic surfaces
Y Song, RP Nair, M Zou, YA Wang - Thin Solid Films, 2010 - Elsevier
Hydrophobic micro/nano-engineered surfaces (MNESs) with good adhesion and frictional
performances were fabricated by the combination of aluminum-induced crystallization (AIC) …
performances were fabricated by the combination of aluminum-induced crystallization (AIC) …
Superhydrophobic surfaces produced by applying a self-assembled monolayer to silicon micro/nano-textured surfaces
A novel way of producing superhydrophobic surfaces by applying a self-assembled
monolayer (SAM) to silicon micro/nano-textured surfaces is presented in this paper. The …
monolayer (SAM) to silicon micro/nano-textured surfaces is presented in this paper. The …
Polycrystalline silicon thin films by aluminum induced crystallization of amorphous silicon
T Wang, H Yan, M Zhang, X Song, Q Pan, T He… - Applied Surface …, 2013 - Elsevier
Polycrystalline silicon (Poly-Si) thin films were successfully fabricated on soda-lime glass
substrate by aluminum induced crystallization (AIC) process. In order to analyze non-uniform …
substrate by aluminum induced crystallization (AIC) process. In order to analyze non-uniform …
Effects of Al film thickness and annealing temperature on the aluminum-induced crystallization of amorphous silicon and carrier mobility
CC Peng, CK Chung, JF Lin - Acta materialia, 2011 - Elsevier
Si crystallization arising in Al (20, 50, 150nm)/amorphous silicon (a-Si)(200nm)/glass
specimens prepared by the aluminum-induced crystallization (AIC) technique and the rapid …
specimens prepared by the aluminum-induced crystallization (AIC) technique and the rapid …
Inverted aluminum-induced layer exchange method for thin film polycrystalline silicon solar cells on insulating substrates
H Kuraseko, N Orita, H Koaizawa… - Applied Physics …, 2008 - iopscience.iop.org
In order to achieve high efficiency thin film polycrystalline silicon (poly-Si) solar cells on
insulating substrate, we have developed a novel crystallization method of amorphous silicon …
insulating substrate, we have developed a novel crystallization method of amorphous silicon …
Nanocrystalline piezoresistive polysilicon film by aluminum-induced crystallization for pressure-sensing applications
SK Patil, Z Celik-Butler, DP Butler - IEEE transactions on …, 2010 - ieeexplore.ieee.org
Nanocrystalline piezoresistive polysilicon films were obtained at low temperatures by
aluminum-induced crystallization (AIC). The films exhibited granular structure with good …
aluminum-induced crystallization (AIC). The films exhibited granular structure with good …
Piezoresistivity of polycrystalline silicon applying the AIC process-route
S Uhlig, S Rau, G Schultes - Sensors and Actuators A: Physical, 2011 - Elsevier
Piezoresistors of polycrystalline silicon were obtained by the aluminum induced
crystallization (AIC) process-route. Tri-layer samples with the layer sequence Si/Al/Si were …
crystallization (AIC) process-route. Tri-layer samples with the layer sequence Si/Al/Si were …
Crystallization of Si Templates of controlled shape, size, and orientation: toward micro-and nanosubstrates
Y Cohin, F Glas, A Cattoni, S Bouchoule… - Crystal Growth & …, 2015 - ACS Publications
Fiber-textured polycrystalline silicon thin films have demonstrated their interest as seed
layers for the epitaxial growth of high-quality materials on substrates such as glass or …
layers for the epitaxial growth of high-quality materials on substrates such as glass or …
Formation of microcrystalline silicon films using rapid crystal aluminum induced crystallization under low-temperature rapid thermal annealing
CC Peng, CK Chung, JF Lin - Thin Solid Films, 2010 - Elsevier
The process of obtaining thin film solar cells using the method of aluminum-induced
crystallization under rapid thermal annealing (RTA) was investigated. 200-nm-thick …
crystallization under rapid thermal annealing (RTA) was investigated. 200-nm-thick …