A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
Conduction mechanisms in one dimensional core-shell nanostructures for gas sensing: A review
Metal oxide based core-shell (CS) nanostructures have been studied for gas sensing
applications to mitigate poor selectivity. When designing core-shell nanostructures with nn …
applications to mitigate poor selectivity. When designing core-shell nanostructures with nn …
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries
EO Filatova, AS Konashuk - The Journal of Physical Chemistry C, 2015 - ACS Publications
The valence and conduction bands of am-and γ-Al2O3 films grown by the atomic layer
deposition technique were studied simultaneously in identical experimental conditions using …
deposition technique were studied simultaneously in identical experimental conditions using …
Hot-electron photodetection with a plasmonic nanostripe antenna
H Chalabi, D Schoen, ML Brongersma - Nano letters, 2014 - ACS Publications
Planar metal–oxide–metal structures can serve as photodetectors that do not rely on the
usual electron–hole pair generation in a semiconductor. Instead, absorbed light in one of the …
usual electron–hole pair generation in a semiconductor. Instead, absorbed light in one of the …
Band offsets, Schottky barrier heights, and their effects on electronic devices
J Robertson - Journal of Vacuum Science & Technology A, 2013 - pubs.aip.org
The authors review the band line-ups and band offsets between semiconductors, dielectrics,
and metals, including the theory, experimental data, and the chemical trends. Band offsets …
and metals, including the theory, experimental data, and the chemical trends. Band offsets …
Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
T Kamimura, K Sasaki, M Hoi Wong… - Applied Physics …, 2014 - pubs.aip.org
The band alignment of Al 2 O 3/n-Ga 2 O 3 was investigated by x-ray photoelectron
spectroscopy (XPS). With a band gap of 6.8±0.2 eV measured for Al 2 O 3, the conduction …
spectroscopy (XPS). With a band gap of 6.8±0.2 eV measured for Al 2 O 3, the conduction …
Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates
G He, X Chen, Z Sun - Surface Science Reports, 2013 - Elsevier
Recently, III–V materials have been extensively studied as potential candidates for post-Si
complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle …
complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle …
A review of InP/InAlAs/InGaAs based transistors for high frequency applications
This paper presents an overview of the rapid progress being made in the development of
InP based devices for high speed applications. Over the past few decades, major aero …
InP based devices for high speed applications. Over the past few decades, major aero …
Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions
Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spontaneous
and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of …
and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of …
Photoelectric energy conversion of plasmon-generated hot carriers in metal–insulator–semiconductor structures
Plasmonic excitation in metals has received great attention for light localization and control
of light-matter interactions at the nanoscale with a plethora of applications in absorption …
of light-matter interactions at the nanoscale with a plethora of applications in absorption …