This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …

Metal oxide based core-shell (CS) nanostructures have been studied for gas sensing
applications to mitigate poor selectivity. When designing core-shell nanostructures with nn …

The valence and conduction bands of am-and γ-Al2O3 films grown by the atomic layer
deposition technique were studied simultaneously in identical experimental conditions using …

Planar metal–oxide–metal structures can serve as photodetectors that do not rely on the
usual electron–hole pair generation in a semiconductor. Instead, absorbed light in one of the …

The authors review the band line-ups and band offsets between semiconductors, dielectrics,
and metals, including the theory, experimental data, and the chemical trends. Band offsets …

The band alignment of Al 2 O 3/n-Ga 2 O 3 was investigated by x-ray photoelectron
spectroscopy (XPS). With a band gap of 6.8±0.2 eV measured for Al 2 O 3, the conduction …

Recently, III–V materials have been extensively studied as potential candidates for post-Si
complementary metal-oxide-semiconductor (CMOS) channel materials. The main obstacle …

This paper presents an overview of the rapid progress being made in the development of
InP based devices for high speed applications. Over the past few decades, major aero …

Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spontaneous
and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of …

Plasmonic excitation in metals has received great attention for light localization and control
of light-matter interactions at the nanoscale with a plethora of applications in absorption …