As-grown-generation (AG) model of NBTI: A shift from fitting test data to prediction
Negative bias temperature instabilities (NBTI) received little attention pre-2000, but have
been intensively investigated post-2000, as they become limiting device lifetime. The …
been intensively investigated post-2000, as they become limiting device lifetime. The …
On the understanding of pMOS NBTI degradation in advance nodes: Characterization, modeling, and exploration on the physical origin of defects
Y Xue, P Ren, J Wu, Z Liu, S Wang, Y Li… - … on Electron Devices, 2023 - ieeexplore.ieee.org
A complete separation flow for different types of traps, including the separation of energy
levels (ETs) and the separation of charging kinetics, making different traps can be modeled …
levels (ETs) and the separation of charging kinetics, making different traps can be modeled …
Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation
To predict the negative bias temperature instability (NBTI) toward the end of pMOSFETs' ten
years lifetime, power-law-based extrapolation is the industrial standard method. The …
years lifetime, power-law-based extrapolation is the industrial standard method. The …
Toward Reliability-and Variability-Aware Design-Technology Co-Optimization in Advanced Nodes: Defect Characterization, Industry-Friendly Modeling, and ML …
Z Ji, Y Xue, P Ren, J Ye, Y Li, Y Wu… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Reliability-and variability-aware design-technology co-optimization (RV-aware DTCO)
becomes indispensable with advanced nodes. However, four key issues hinder its practical …
becomes indispensable with advanced nodes. However, four key issues hinder its practical …
Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs
Silicon bandgap limits the reduction of operation voltage when downscaling device sizes.
This increases the electrical field within-a-device and hot carrier aging (HCA) is becoming …
This increases the electrical field within-a-device and hot carrier aging (HCA) is becoming …
Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging
The access transistor of SRAM can suffer both positive bias temperature instability (PBTI)
and hot carrier aging (HCA) during operation. The understanding of electron traps (ETs) is …
and hot carrier aging (HCA) during operation. The understanding of electron traps (ETs) is …
An Investigation on Border Traps in III–V MOSFETs With an In0.53Ga0.47As Channel
Continuing CMOS performance scaling requires developing MOSFETs of high-mobility
semiconductors and InGaAs is a strong candidate for n-channel. InGaAs MOSFETs …
semiconductors and InGaAs is a strong candidate for n-channel. InGaAs MOSFETs …
Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs
In this letter, we present an experimental study on the frequency (f) dependence of trap
generation under AC negative bias temperature instability (NBTI) stress in Si p-channel fin …
generation under AC negative bias temperature instability (NBTI) stress in Si p-channel fin …
Hot carrier aging and its variation under use-bias: Kinetics, prediction, impact on Vdd and SRAM
As CMOS scales down, hot carrier aging (HCA) scales up and can be a limiting aging
process again. This has motivated re-visiting HCA, but recent works have focused on …
process again. This has motivated re-visiting HCA, but recent works have focused on …