[HTML][HTML] β-Ga2O3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination
In this work, we demonstrate a deep mesa etch design for efficient edge field termination in β-
Ga 2 O 3 Schottky barrier diodes (SBDs). The proposed design enabled parallel plate fields …
Ga 2 O 3 Schottky barrier diodes (SBDs). The proposed design enabled parallel plate fields …
Robust avalanche in 1.7 kV vertical GaN diodes with a single-implant bevel edge termination
This work demonstrates a novel junction termination extension (JTE) with a graded charge
profile for vertical GaN pn diodes. The fabrication of this JTE obviates GaN etch and requires …
profile for vertical GaN pn diodes. The fabrication of this JTE obviates GaN etch and requires …
From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices
Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within
the semiconductor device community due to their potential to enhance device performance …
the semiconductor device community due to their potential to enhance device performance …
Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage
Vertical GaN junction barrier Schottky (JBS) diodes with superior electrical characteristics
and nondestructive breakdown were realized using selective-area p-type doping via Mg ion …
and nondestructive breakdown were realized using selective-area p-type doping via Mg ion …
[HTML][HTML] Ion-implanted triple-zone graded junction termination extension for vertical GaN pn diodes
We demonstrate an ion-implanted triple-zone junction termination extension (JTE) for
vertical GaN pn diodes. Due to the spatial distribution of fixed charge in the triple-zone JTE …
vertical GaN pn diodes. Due to the spatial distribution of fixed charge in the triple-zone JTE …
Implanted guard ring edge termination with avalanche capability for vertical GaN devices
Edge termination is the key building block in power devices to enable near-ideal, avalanche
breakdown voltage (BV). This work presents the design, fabrication, and physics of a GaN …
breakdown voltage (BV). This work presents the design, fabrication, and physics of a GaN …
1 kV self-aligned vertical GaN superjunction diode
This work demonstrates vertical GaN superjunction (SJ) diodes fabricated via a novel self-
aligned process. The SJ comprises n-GaN pillars wrapped by the charge-balanced p-type …
aligned process. The SJ comprises n-GaN pillars wrapped by the charge-balanced p-type …
High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN pn Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk …
A Taube, M Kamiński, J Tarenko… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this work, we report fabrication and characterization of high breakdown voltage and high
current injection vertical gallium nitride (GaN)-on-GaN pn diodes with an etched mesa …
current injection vertical gallium nitride (GaN)-on-GaN pn diodes with an etched mesa …
GaN-on-Si quasi-vertical pn diode with junction termination extension based on hydrogen plasma treatment and diffusion
Utilizing hydrogen plasma treatment and controlled diffusion, a junction termination
extension (JTE) structure for vertical gallium nitride (GaN) pn diode with gradient hole …
extension (JTE) structure for vertical gallium nitride (GaN) pn diode with gradient hole …
Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation
In this review, we briefly summarize the major challenges and our recent progress in the
development of GaN Junction Barrier Schottky (JBS) diodes using selective-area p-type …
development of GaN Junction Barrier Schottky (JBS) diodes using selective-area p-type …