Theory of hydrogen in diamond
JP Goss - Journal of Physics: Condensed Matter, 2003 - iopscience.iop.org
Hydrogen is a ubiquitous impurity in diamond but in contrast to other group IV materials the
microscopic structure adopted in bulk material has largely remained elusive. It has therefore …
microscopic structure adopted in bulk material has largely remained elusive. It has therefore …
Deep level transient spectroscopy of defects in high-energy light-particle irradiated Si
FD Auret, PNK Deenapanray - Critical reviews in solid state and …, 2004 - Taylor & Francis
The authors review what has been learned concerning the electrical and annealing
properties of point defects in high-energy electron or proton irradiated Si from deep level …
properties of point defects in high-energy electron or proton irradiated Si from deep level …
Hydrogen/silicon complexes in silicon from computational searches
AJ Morris, CJ Pickard, RJ Needs - Physical Review B—Condensed Matter and …, 2008 - APS
Defects in crystalline silicon consisting of a silicon self-interstitial atom and one, two, three,
or four hydrogen atoms are studied within density-functional theory (DFT). We search for low …
or four hydrogen atoms are studied within density-functional theory (DFT). We search for low …
Self-interstitial–hydrogen complexes in Si
Native defects in Si are readily created during a variety of processes. They diffuse rapidly
and interact with themselves, with each other, and with many impurities, in particular …
and interact with themselves, with each other, and with many impurities, in particular …
High efficiency laser doping silicon solar cell with aluminium oxide rear side passivation
B Xiao - 2014 - unsworks.unsw.edu.au
Technologies that could further improve commercial silicon solar cell cost effectiveness are
explored in this thesis. The screen printed p-type silicon solar cell efficiency is limited by two …
explored in this thesis. The screen printed p-type silicon solar cell efficiency is limited by two …
Increased thickness of buried oxide layer of silicon on insulator in separation by implantation of oxygen with water plasma
J Chen, M Chen, Y Dong, X Wang, Z Zheng… - Journal of Vacuum …, 2002 - pubs.aip.org
An implanter without an ion mass analyzer has been used to successfully fabricate silicon
on insulator (SOI) materials by H 2 O+, HO+, and O+ ion implantation using water plasma …
on insulator (SOI) materials by H 2 O+, HO+, and O+ ion implantation using water plasma …