Study on dislocation annihilation mechanism of the high-quality GaN grown on sputtered AlN/PSS and its application in green light-emitting diodes
R Peng, X Meng, S Xu, J Zhang, P Li… - … on Electron Devices, 2019 - ieeexplore.ieee.org
GaN was grown on the sputtered AlN/patterned sapphire substrate under two growth modes
by metal-organic chemical vapor deposition, which was named as “rising tide” and “tsunami” …
by metal-organic chemical vapor deposition, which was named as “rising tide” and “tsunami” …
Controlled nano-roughening of the GaN surface by post-growth thermal annealing
GaN-based semiconductor structures have been widely used in photonic, electronic, and
optoelectronic devices. However, due to the lack of lattice-matched substrates for GaN …
optoelectronic devices. However, due to the lack of lattice-matched substrates for GaN …
High thermal stability of abrupt SiO2/GaN interface with low interface state density
NX Truyen, N Taoka, A Ohta, K Makihara… - Japanese Journal of …, 2018 - iopscience.iop.org
The effects of postdeposition annealing (PDA) on the interface properties of a SiO 2/GaN
structure formed by remote oxygen plasma-enhanced chemical vapor deposition (RP-CVD) …
structure formed by remote oxygen plasma-enhanced chemical vapor deposition (RP-CVD) …
Growth and characterization of cubic GaN grown on GaAs (110) substrate by MOVPE
I Daldoul, S Othmani, A Mballo, P Vuong… - Materials Science in …, 2021 - Elsevier
GaN layers were grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaAs (110)
substrate at temperature varying in the range of 750–900° C. 50 nm-thick GaN layer grown …
substrate at temperature varying in the range of 750–900° C. 50 nm-thick GaN layer grown …
Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures
The size and density of nanopits, generated at the surface of their top layer, strongly affect
the electrical and optical properties of AlGaN-based structures. Therefore, the control of the …
the electrical and optical properties of AlGaN-based structures. Therefore, the control of the …
Optical characterization by photoreflectance of GaN after its partial thermal decomposition
In the current study, we investigated the partial decomposition of GaN layers grown on SiN-
treated sapphire substrate in an atmospheric pressure metal organic vapor phase epitaxy …
treated sapphire substrate in an atmospheric pressure metal organic vapor phase epitaxy …
Observation of the early stages of GaN thermal decomposition at 1200° C under N2
We investigated the partial decomposition of GaN layers grown in an atmospheric pressure
metal organic vapor phase epitaxy (AP-MOVPE) vertical reactor at 1200° C under N 2 …
metal organic vapor phase epitaxy (AP-MOVPE) vertical reactor at 1200° C under N 2 …
Enhanced transport properties in InAlGaN/AlN/GaN heterostructures on Si (111) substrates: The role of interface quality
J Zhang, X Yang, J Cheng, Y Feng, P Ji, A Hu… - Applied Physics …, 2017 - pubs.aip.org
We have investigated the structural and transport properties of InAlGaN/AlN/GaN
heterostructures grown on Si substrates. By depositing the AlN spacer layer at a low …
heterostructures grown on Si substrates. By depositing the AlN spacer layer at a low …
In situ spectral reflectance analysis of the early stages of GaN thermal decomposition
The decomposition of GaN layers have been in situ monitored by a spectral reflectance
system. A particular interest is given to the early stages of GaN decomposition. The analysis …
system. A particular interest is given to the early stages of GaN decomposition. The analysis …
Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE
We have investigated the kinetic growth of low temperature GaN nucleation layers (LT-GaN)
grown on GaAs substrates with different crystalline orientations. GaN nucleation layers were …
grown on GaAs substrates with different crystalline orientations. GaN nucleation layers were …