A systematic study of GaN-based heterostructure field-effect transistors with an insulating
carbon-doped GaN back barrier for high-voltage operation is presented. The impact of …

A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer
has been used to grow high quality GaN layers on 4-in. Si substrates. The use of this …

The electrical properties of two-dimensional hole gases (2DHGs) in GaN/AlGaN/GaN double
heterostructures were investigated. The layers were grown on sapphire substrates and a …

This letter reports the first millimeter-wave power demonstration of AlGaN/GaN high-electron-
mobility transistors grown on a (110) silicon substrate. Owing to an AlN/AlGaN stress …

GaN-based heterojunction field effect transistors (HFETs) will play major roles in the high-
power, high-frequency military and commercial arenas for microwave and millimeter wave …

The influence of AlN buffer growth temperature on the quality and stress of 4.5 μm GaN
epilayer on 6H–SiC substrate by organometallic vapor phase epitaxy (MOVPE) has been …

The current-voltage characteristics of n-type GaN Schottky diodes have been measured in
the extrinsic region (that is, the temperature range of 100–300 K). The effective density of …

We report on the intrinsically limited low-field mobility of the two-dimensional electron gas
(2DEG) in gated AlGaN/GaN and AlGaN/AlN/GaN heterostructures. Monte Carlo transport …

Field-effect transistors (FETs) were grown on both GaN and AlGaN buffers. X-ray reciprocal
space mapping and ω-2 θ scans showed that the AlGaN barriers grown on these two buffers …

AlGaN/GaN high-electron-mobility transistors (HEMTs) with indium tin oxide (ITO)
transparent gate electrodes have been fabricated. The transparent gate electrodes enable …