Extreme ultraviolet lithography
D Kazazis, JG Santaclara, J van Schoot… - Nature Reviews …, 2024 - nature.com
Extreme ultraviolet lithography (EUVL) was recently adopted by the semiconductor industry
as the leading-edge lithography technique for continued miniaturization of semiconductor …
as the leading-edge lithography technique for continued miniaturization of semiconductor …
Recent progress of inorganic photoresists for next-generation EUV lithography
YK Kang, SJ Lee, S Eom, BG Kim… - Journal of Materials …, 2024 - pubs.rsc.org
The continuous scaling down of semiconductor devices has significantly benefited
consumers by enhancing the device performance, portability, power efficiency, and …
consumers by enhancing the device performance, portability, power efficiency, and …
Photon momentum enabled light absorption in silicon
SS Kharintsev, AI Noskov, EI Battalova, L Katrivas… - ACS …, 2024 - ACS Publications
Photons do not carry sufficient momentum to induce indirect optical transitions in
semiconducting materials, such as silicon, necessitating the assistance of lattice phonons to …
semiconducting materials, such as silicon, necessitating the assistance of lattice phonons to …
Sequentially photocatalytic degradation of mussel-inspired polydopamine: From nanoscale disassembly to effective mineralization
X Liu, D Li, M Tabassum, C Huang, K Yi, T Fang… - Journal of Colloid and …, 2024 - Elsevier
Mussel-inspired polydopamine (PDA) coating has been utilized extensively as versatile
deposition strategies that can functionalize surfaces of virtually all substrates. However, the …
deposition strategies that can functionalize surfaces of virtually all substrates. However, the …
Si-Containing Reverse-Gradient Block Copolymer for Inorganic Pattern Amplification in EUV Lithography
Although extreme ultraviolet lithography (EUVL) has emerged as a leading technology for
achieving high quality sub-10 nm patterns, the insufficient pattern height of photoresist …
achieving high quality sub-10 nm patterns, the insufficient pattern height of photoresist …
High-energy tunable ultraviolet pulses generated by optical leaky wave in filamentation
L Xu, T Xi - Communications Physics, 2024 - nature.com
Ultraviolet pulses could open up new opportunities for the study of strong-field physics and
ultrafast science. However, the existing methods for generating ultraviolet pulses face …
ultrafast science. However, the existing methods for generating ultraviolet pulses face …
[PDF][PDF] 微观几何设计制造的关键技术与工程应用
刘振宇， 陈轲文， 裘辿， 李明， 张雨豪， 谭建荣… - 机械工程学报, 2024 - qikan.cmes.org
近年来, 高端装备制造技术朝着极高精度, 极高性能与极限尺度方向迅猛发展,
对几何学提出了一系列新的问题和需求. 微观几何学描述和刻画在表面或内部具有微小尺度细节 …
对几何学提出了一系列新的问题和需求. 微观几何学描述和刻画在表面或内部具有微小尺度细节 …
[HTML][HTML] Recent Advances in Metal-Oxide-Based Photoresists for EUV Lithography
MW Hasan, L Deeb, S Kumaniaev, C Wei… - …, 2024 - pmc.ncbi.nlm.nih.gov
Extreme ultraviolet lithography (EUVL) is a leading technology in semiconductor
manufacturing, enabling the creation of high-resolution patterns essential for advanced …
manufacturing, enabling the creation of high-resolution patterns essential for advanced …
Lithography-free patterning of chalcogenide materials for integrated photonic devices
Z Hu, Y Li, Y Li, S Yao, H Chen, T Zhang, Z Ao… - arXiv preprint arXiv …, 2024 - arxiv.org
Chalcogenide material-based integrated photonic devices have garnered widespread
attention due to their unique wideband transparency. Despite their recognized CMOS …
attention due to their unique wideband transparency. Despite their recognized CMOS …
Examination of measurement by hard X-ray grazing incidence diffraction patterns of isolated lattices for 3D 1-nm resolution
T Hoshino, S Aoki, M Itoh, H Itoh, T Inoue… - Optical …, 2024 - spiedigitallibrary.org
Scatterometry has been put into practical use for microstructure measurement of ultra-large-
scale integration due to its high process compatibility. On the other hand, its application has …
scale integration due to its high process compatibility. On the other hand, its application has …