This review paper discusses several key issues associated with deep submicron CMOS
devices as well as advanced semiconductor materials in ionizing radiation environments …

This paper reviews and compares predictions of the Dutta-Horn model of low-frequency
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …

An overview is presented of total ionizing dose (TID) effects in MOS and bipolar devices from
a historical perspective, focusing primarily on work presented at the annual IEEE Nuclear …

Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …

Total ionizing dose radiation effects on the electrical properties of metal-oxide-
semiconductor devices and integrated circuits are complex in nature and have changed …

Recent experimental studies on 1/f noise in MOS transistors are reviewed. Arguments are
given for the two schools of thought on the origin of 1/f noise. The consequences of models …

An extensive comparison of the 1/f noise and radiation response of MOS devices is
presented. Variations in the room-temperature 1/f noise of unirradiated transistors in the …

Capture cross-section data from the literature and recent density-functional theory (DFT)
calculations strongly suggest that the 1/f noise of MOS devices is caused by the thermally …

An overview of the effects of border traps on device performance and reliability is presented
for Si, Ge, SiGe, InGaAs, SiC, GaN, and carbon-based MOS devices that are subjected to …

Interface traps generally are not considered to be likely sources of low-frequency (LF) noise
and/or random telegraph noise (RTN) in metal–oxide–semiconductor (MOS) devices …