It is well known that the p-type AlGaN electron blocking layer (p-EBL) can block hole
injection for deep ultraviolet light-emitting diodes (DUV LEDs). The polarization induced …

In this study, we investigated laser characteristics via photoexcitation and electro-optical
characteristics via current injection in ultraviolet (UV)-B laser diodes. To achieve light …

Deep-UV distributed Bragg reflectors (DBRs) operating at λ= 220–250 nm with reflectivity
close to unity were produced using epitaxial Al x Ga 1-x N/AlN superlattice structures grown …

AlGaN laser diode (LD), in the ultraviolet (UV) wavelength range of 260 nm–270 nm, with
enhanced optical and electrical properties is proposed numerically in this work. A laser …

We demonstrated onset of deep-ultraviolet (DUV) surface stimulated emission (SE) from c-
plane AlGaN multiple-quantum well (MQW) heterostructures grown on a sapphire substrate …

Although both III-N laser diodes (LDs) and LEDs employ electron blocking layers (EBLs) to
reduce electron leakage from the active region, LDs typically operate at far higher current …

The III-N wide-bandgap alloys in the AlInGaN system have many important and unique
electrical and optical properties which have been exploited to develop deep-ultraviolet …

The relaxation ratio of p-GaN/p-AlGaN superlattices was controlled by using different AlGaN
underlying layers and the effects of relaxation on the electrical properties were investigated …

This article covers an investigation of the optical properties and the origin of the mechanism
of spontaneous subpeak emission from an ultraviolet‐B (UVB) light‐emitting diode …

High-efficiency power semiconductor devices are the key to improve the efficiency of power
electronic systems. For the last three decades, Si power devices (such as MOSFETS, IGBTs …