Robust approach towards wearable power efficient transistors with low subthreshold swing
For emerging wearable chip-based electronics, power loss is a critical concern for micro-
nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec− 1 for the …
nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec− 1 for the …
Transparent and flexible zinc oxide-based thin-film diodes and thin-film transistors: A review
Electronics today has evolved significantly, including its application in transparent and
flexible devices. Flexible electronics offers new product concepts, including low production …
flexible devices. Flexible electronics offers new product concepts, including low production …
Self-selective analogue FeOx-based memristor induced by the electron transport in the defect energy level
A Fe 2 O 3 film homojunction was orderly prepared by magnetron sputtering and a
hydrothermal method. The Fe 2 O 3 homojunction-based memristor exhibits an obvious self …
hydrothermal method. The Fe 2 O 3 homojunction-based memristor exhibits an obvious self …
Improved memory performance of ALD grown HfO2 films by nitrogen doping
Resistive switching devices have shown potential in storage class memory and artificial
intelligence applications but however, it faces drastic limitations due to low endurance, bad …
intelligence applications but however, it faces drastic limitations due to low endurance, bad …
Au decorated ZnO nanostructures for enhanced visible emission and memory applications
Metal/semiconductor nanocomposites present the most versatile way to tune the optical and
electrical properties of semiconductors at the nanometer scale. In the present study, Au/ZnO …
electrical properties of semiconductors at the nanometer scale. In the present study, Au/ZnO …
An Opto-Electronic HfOx-Based Transparent Memristive Synapse for Neuromorphic Computing System
A Saleem, D Kumar, F Wu, LB Keong… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In this study, a transparent bilayer memristor showing both electrical and optical synapses
along with good electrical properties after annealing is presented. In addition to 85 …
along with good electrical properties after annealing is presented. In addition to 85 …
Flexible oxide thin film transistors, memristors, and their integration
Flexible electronics have seen extensive research over the past years due to their potential
stretchability and adaptability to non‐flat surfaces. They are key to realizing low‐power …
stretchability and adaptability to non‐flat surfaces. They are key to realizing low‐power …
Ultrafine nickel sulfide-based bipolar resistive switching device as artificial synapses for neuromorphic application
Biologically inspired systems, particularly those that mimic the nervous system of living
beings, are becoming more demanded due to their ability to solve ill-posed problems such …
beings, are becoming more demanded due to their ability to solve ill-posed problems such …
Yb/Se/WO3/Yb Thin Film Transistors as Rectifiers, N‐Channel Metal Oxide Semiconductor Capacitors, Laser Sensors, and Microwave Bandstop Filters
AF Qasrawi, RB Daragme - physica status solidi (a), 2022 - Wiley Online Library
Herein, Yb/p–Se/p–WO3/Yb heterojunctions are employed as multifunctional devices. The
devices which show back‐to‐back Schottky (BBS) diode characteristics are prepared by the …
devices which show back‐to‐back Schottky (BBS) diode characteristics are prepared by the …
[HTML][HTML] Controlled Charge Transport in ZrO2 and its Bilayer Structures for Low-Power Memory
Redox-based oxide resistive random-access memories (ReRAM) are being pursued as
adjustable electronic devices for integrated network applications such as neuromorphic …
adjustable electronic devices for integrated network applications such as neuromorphic …