GeSn/SiO2 Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics
The development of short-wave infrared (SWIR) photonics based on GeSn alloys is of high
technological interest for many application fields, such as the Internet of things or pollution …
technological interest for many application fields, such as the Internet of things or pollution …
Epitaxial GeSn obtained by high power impulse magnetron sputtering and the heterojunction with embedded GeSn nanocrystals for shortwave infrared detection
GeSn alloys have the potential of extending the Si photonics functionality in shortwave
infrared (SWIR) light emission and detection. Epitaxial GeSn layers were deposited on a …
infrared (SWIR) light emission and detection. Epitaxial GeSn layers were deposited on a …
Tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film for integrated optical gas sensors
In this paper, we systematically investigated tailoring bolometric properties of a proposed
heat-sensitive TiO_x/Ti/TiO_x tri-layer film for a waveguide-based bolometer, which can play …
heat-sensitive TiO_x/Ti/TiO_x tri-layer film for a waveguide-based bolometer, which can play …
Optimization of gold germanium (Au0. 17Ge0. 83) thin films for high sensitivity resistance thermometry
Gold–germanium (Au x Ge 1− x) solid solutions have been demonstrated as highly
sensitive thin film thermometers for cryogenic applications. However, little is known …
sensitive thin film thermometers for cryogenic applications. However, little is known …
Metasurface-assisted amorphous germanium-tin waveguide bolometer for mid-infrared photodetection
An amorphous germanium-tin (a-Ge_0. 83Sn_0. 17) waveguide bolometer featuring a one-
dimension (1D) metasurface absorber is proposed for mid-infrared photodetection at room …
dimension (1D) metasurface absorber is proposed for mid-infrared photodetection at room …
Study of boron doped amorphous silicon lightly hydrogenated prepared by DC magnetron sputtering for infrared detectors applications
The objective of this study is to investigate the effect of boron doping concentration on the
bolometric properties of lightly hydrogenated amorphous silicon doped with boron (a-Si: H …
bolometric properties of lightly hydrogenated amorphous silicon doped with boron (a-Si: H …
[HTML][HTML] Effect of Growth Temperature on Crystallization of Ge1−xSnx Films by Magnetron Sputtering
H Huang, D Zhao, C Qi, J Huang, Z Zeng, B Zhang… - Crystals, 2022 - mdpi.com
Ge1− xSnx film with Sn content (at%) as high as 13% was grown on Si (100) substrate with
Ge buffer layer by magnetron sputtering epitaxy. According to the analysis of HRXRD and …
Ge buffer layer by magnetron sputtering epitaxy. According to the analysis of HRXRD and …
Amorphous SiSn alloy: Another candidate material for temperature sensing layers in uncooled microbolometers
H ElGhonimy, MR Abdel-Rahman… - … status solidi (b), 2021 - Wiley Online Library
Herein, the prospect of using amorphous Si1–x Sn x alloys as alternative temperature‐
sensing active materials in microbolometers is evaluated by studying their temperature …
sensing active materials in microbolometers is evaluated by studying their temperature …
[HTML][HTML] Intersubband optical nonlinearity of GeSn quantum dots under vertical electric field
The impact of vertical electrical field on the electron related linear and 3rd order nonlinear
optical properties are evaluated numerically for pyramidal GeSn quantum dots with different …
optical properties are evaluated numerically for pyramidal GeSn quantum dots with different …
Electro-Optical Characterization of an Amorphous Germanium-Tin (Ge1-XSnx) Microbolometer
The utilization of amorphous germanium-tin (Ge1-xSnx) semiconducting thin films as
temperature-sensing layers in microbolometers was recently presented and patented. The …
temperature-sensing layers in microbolometers was recently presented and patented. The …