[图书][B] Nucleation theory and growth of nanostructures
VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
Extremely dense arrays of germanium and silicon nanostructures
AA Shklyaev, M Ichikawa - Physics-Uspekhi, 2008 - iopscience.iop.org
Results of investigations into surface processes of the formation of germanium and silicon
nanostructures are analyzed. A mechanism of three-dimensional island nucleation and …
nanostructures are analyzed. A mechanism of three-dimensional island nucleation and …
Kinetics of the initial stage of coherent island formation in heteroepitaxial systems
VG Dubrovskii, GE Cirlin, VM Ustinov - Physical Review B, 2003 - APS
The stress-driven formation of coherent islands in heteroepitaxial systems is studied within
the frame of the kinetic theory of nucleation under dynamical conditions. The kinetic model …
the frame of the kinetic theory of nucleation under dynamical conditions. The kinetic model …
Self-assembly of InAs quantum dots on GaAs (001) by molecular beam epitaxy
J Wu, P Jin - Frontiers of Physics, 2015 - Springer
Currently, the nature of self-assembly of three-dimensional epitaxial islands or quantum dots
(QDs) in a lattice-mismatched heteroepitaxial growth system, such as InAs/GaAs (001) and …
(QDs) in a lattice-mismatched heteroepitaxial growth system, such as InAs/GaAs (001) and …
Fluctuation-induced spreading of size distribution in condensation kinetics
VG Dubrovskii - The Journal of chemical physics, 2009 - pubs.aip.org
One of the major results of condensation theory is the time independence of the size
distribution shape (in terms of a certain invariant size) at the stage of regular growth of …
distribution shape (in terms of a certain invariant size) at the stage of regular growth of …
Nanostructures with Ge–Si quantum dots for infrared photodetectors
II Izhnin, OI Fitsych, AV Voitsekhovskii… - Opto-electronics …, 2018 - Elsevier
In this paper questions of optimization of growth conditions in the method of molecular beam
epitaxy for creation of high-efficient quantum dot infrared photodetectors are considered. As …
epitaxy for creation of high-efficient quantum dot infrared photodetectors are considered. As …
[HTML][HTML] Multi-scale designed Zeolitic Imidazolate Framework–derived N-doped cobalt/carbon composites with enhanced electromagnetic performance by magnetic …
Y Xiang, J Qiu, ER Elsharkawy, S Melhi… - … Composites and Hybrid …, 2024 - Springer
The pursuit of achieving wideband electromagnetic wave absorption to meet the demands in
multiple fields has attracted attention in the field of electromagnetic wave absorption …
multiple fields has attracted attention in the field of electromagnetic wave absorption …
Nucleation theory beyond the deterministic limit. I. The nucleation stage
VG Dubrovskii, MV Nazarenko - The Journal of chemical physics, 2010 - pubs.aip.org
This work addresses theory of nucleation and condensation based on the continuous Fokker-
Plank type kinetic equation for the distribution of supercritical embryos over sizes beyond the …
Plank type kinetic equation for the distribution of supercritical embryos over sizes beyond the …
Comparative analysis of germanium–silicon quantum dots formation on Si (100), Si (111) and Sn/Si (100) surfaces
K Lozovoy, A Kokhanenko, A Voitsekhovskii - Nanotechnology, 2018 - iopscience.iop.org
In this paper theoretical modeling of formation and growth of germanium–silicon quantum
dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out …
dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out …
Effect of growth kinetics on the structural and optical properties of quantum dot ensembles
VG Dubrovskii, GE Cirlin, YG Musikhin… - Journal of crystal …, 2004 - Elsevier
The growth kinetics influence on the structural and optical properties of quantum dot
ensembles in the Ge/Si (100) and InAs/GaAs (100) heteroepitaxial systems is studied …
ensembles in the Ge/Si (100) and InAs/GaAs (100) heteroepitaxial systems is studied …