Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

A Yan, C Wang, J Yan, Z Wang, E Zhang… - Advanced Functional …, 2024 - Wiley Online Library
High‐performance thin‐film transistors (TFTs) integrated circuits (ICs) have become
increasingly necessary to meet the emerging demands such as healthcare, edge computing …

TFT channel materials for display applications: From amorphous silicon to transition metal dichalcogenides

GW Shim, W Hong, JH Cha, JH Park, KJ Lee… - Advanced …, 2020 - Wiley Online Library
As the need for super‐high‐resolution displays with various form factors has increased, it
has become necessary to produce high‐performance thin‐film transistors (TFTs) that enable …

Metal oxide semiconductor thin-film transistors for flexible electronics

L Petti, N Münzenrieder, C Vogt, H Faber… - Applied Physics …, 2016 - pubs.aip.org
The field of flexible electronics has rapidly expanded over the last decades, pioneering
novel applications, such as wearable and textile integrated devices, seamless and …

Achieving a low-voltage, high-mobility IGZO transistor through an ALD-derived bilayer channel and a hafnia-based gate dielectric stack

MH Cho, CH Choi, HJ Seul, HC Cho… - ACS Applied Materials …, 2021 - ACS Publications
Ultrahigh-resolution displays for augmented reality (AR) and virtual reality (VR) applications
require a novel architecture and process. Atomic-layer deposition (ALD) enables the facile …

Thermally activated defect engineering for highly stable and uniform ALD-amorphous IGZO TFTs with high-temperature compatibility

DG Kim, WB Lee, S Lee, J Koh, B Kuh… - ACS Applied Materials …, 2023 - ACS Publications
Highly stable IGZO thin-film transistors derived from atomic layer deposition are crucial for
the semiconductor industry. However, unavoidable defect generation during high …

Amorphous oxide semiconductors: From fundamental properties to practical applications

B Lu, F Zhuge, Y Zhao, YJ Zeng, L Zhang… - Current Opinion in Solid …, 2023 - Elsevier
Amorphous oxide semiconductors (AOSs) have exceptional features of high visible
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …

Effect of channel thickness on performance of ultra-thin body IGZO field-effect transistors

MJ Kim, HJ Park, S Yoo, MH Cho… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Amorphous indium–gallium–zinc oxide (a-IGZO) is a promising channel material for an
upper transistor in monolithic three-dimensional devices. Although the field-effect transistors …

Flexible ultralow-power sensor interfaces for e-skin

C Jiang, X Cheng, A Nathan - Proceedings of the IEEE, 2019 - ieeexplore.ieee.org
Thin-film electronics has hugely benefitted from low-cost processes, large-area
processability, and multifunctionality. This has not only stimulated innovation in display and …

In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses

Y Jang, SY Lee - ACS Applied Electronic Materials, 2022 - ACS Publications
We present comprehensive studies on ZnON thin films deposited by radio-frequency (RF)
magnetron sputtering using a ZnO target under various nitrogen plasma conditions. A ZnON …

[HTML][HTML] Real-and reciprocal-space attributes of band tail states

JF Wager - AIP Advances, 2017 - pubs.aip.org
Band tail states are localized electronic states existing near conduction and valence band
edges. Band tail states are invariably found to exhibit an exponential distribution defined by …