Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress
A Yan, C Wang, J Yan, Z Wang, E Zhang… - Advanced Functional …, 2024 - Wiley Online Library
High‐performance thin‐film transistors (TFTs) integrated circuits (ICs) have become
increasingly necessary to meet the emerging demands such as healthcare, edge computing …
increasingly necessary to meet the emerging demands such as healthcare, edge computing …
TFT channel materials for display applications: From amorphous silicon to transition metal dichalcogenides
As the need for super‐high‐resolution displays with various form factors has increased, it
has become necessary to produce high‐performance thin‐film transistors (TFTs) that enable …
has become necessary to produce high‐performance thin‐film transistors (TFTs) that enable …
Metal oxide semiconductor thin-film transistors for flexible electronics
The field of flexible electronics has rapidly expanded over the last decades, pioneering
novel applications, such as wearable and textile integrated devices, seamless and …
novel applications, such as wearable and textile integrated devices, seamless and …
Achieving a low-voltage, high-mobility IGZO transistor through an ALD-derived bilayer channel and a hafnia-based gate dielectric stack
Ultrahigh-resolution displays for augmented reality (AR) and virtual reality (VR) applications
require a novel architecture and process. Atomic-layer deposition (ALD) enables the facile …
require a novel architecture and process. Atomic-layer deposition (ALD) enables the facile …
Thermally activated defect engineering for highly stable and uniform ALD-amorphous IGZO TFTs with high-temperature compatibility
DG Kim, WB Lee, S Lee, J Koh, B Kuh… - ACS Applied Materials …, 2023 - ACS Publications
Highly stable IGZO thin-film transistors derived from atomic layer deposition are crucial for
the semiconductor industry. However, unavoidable defect generation during high …
the semiconductor industry. However, unavoidable defect generation during high …
Amorphous oxide semiconductors: From fundamental properties to practical applications
Amorphous oxide semiconductors (AOSs) have exceptional features of high visible
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …
Effect of channel thickness on performance of ultra-thin body IGZO field-effect transistors
MJ Kim, HJ Park, S Yoo, MH Cho… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Amorphous indium–gallium–zinc oxide (a-IGZO) is a promising channel material for an
upper transistor in monolithic three-dimensional devices. Although the field-effect transistors …
upper transistor in monolithic three-dimensional devices. Although the field-effect transistors …
Flexible ultralow-power sensor interfaces for e-skin
Thin-film electronics has hugely benefitted from low-cost processes, large-area
processability, and multifunctionality. This has not only stimulated innovation in display and …
processability, and multifunctionality. This has not only stimulated innovation in display and …
In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses
We present comprehensive studies on ZnON thin films deposited by radio-frequency (RF)
magnetron sputtering using a ZnO target under various nitrogen plasma conditions. A ZnON …
magnetron sputtering using a ZnO target under various nitrogen plasma conditions. A ZnON …
[HTML][HTML] Real-and reciprocal-space attributes of band tail states
JF Wager - AIP Advances, 2017 - pubs.aip.org
Band tail states are localized electronic states existing near conduction and valence band
edges. Band tail states are invariably found to exhibit an exponential distribution defined by …
edges. Band tail states are invariably found to exhibit an exponential distribution defined by …