Recent advances and trend of HEV/EV‐oriented power semiconductors–an overview
This study introduces the development advances and trend of power semiconductors used
in hybrid and electric vehicles (HEV/EV). The status and forecast of power electronics' …
in hybrid and electric vehicles (HEV/EV). The status and forecast of power electronics' …
Reverse-conducting insulated gate bipolar transistor: A review of current technologies
EM Findlay, F Udrea - IEEE Transactions on Electron Devices, 2018 - ieeexplore.ieee.org
The reverse-conducting insulated gate bipolar transistor (RC-IGBT) has several benefits
over a separate IGBT and diode solution and has the potential to become the dominant …
over a separate IGBT and diode solution and has the potential to become the dominant …
Simulation study of a low ON-state voltage superjunction IGBT with self-biased PMOS
J Huang, H Huang, XB Chen - IEEE Transactions on Electron …, 2019 - ieeexplore.ieee.org
In this brief, a novel superjunction (SJ)-insulated-gate bipolar transistor (SJ-IGBT) is
proposed and investigated by simulation, where a floating N-base region on the P-pillar …
proposed and investigated by simulation, where a floating N-base region on the P-pillar …
The Soft Superjunction Insulated Gate Bipolar Transistor: A High Speed Structure With Enhanced Electron Injection
M Antoniou, F Udrea, F Bauer… - IEEE Transactions on …, 2011 - ieeexplore.ieee.org
The aim of this paper is to demonstrate the application of the superjunction (SJ) design in an
insulated gate bipolar transistor (IGBT). Bipolar conduction is present and enhanced at the …
insulated gate bipolar transistor (IGBT). Bipolar conduction is present and enhanced at the …
On the investigation of the “Anode Side” superJunction IGBT design concept
M Antoniou, N Lophitis, F Udrea… - IEEE Electron …, 2017 - ieeexplore.ieee.org
In this letter, we present the “anode-side” SuperJunction trench field stop+ IGBT concept with
drift region SuperJunction pillars placed at the anode side of the structure rather than the …
drift region SuperJunction pillars placed at the anode side of the structure rather than the …
Simulation study of a novel snapback-free and low turn-off loss reverse-conducting IGBT with controllable trench gate
A novel ultra-fast snapback-free controllable trench gate (CTG) reverse-conducting insulated
gate bipolar transistor (RC-IGBT) is proposed and investigated by simulation. It features a …
gate bipolar transistor (RC-IGBT) is proposed and investigated by simulation. It features a …
An investigation of a novel snapback-free reverse-conducting IGBT and with dual gates
L Zhu, X Chen - IEEE transactions on electron devices, 2012 - ieeexplore.ieee.org
A novel reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with an
automatically controlled anode gate, named AG-RC-IGBT, is proposed in this paper …
automatically controlled anode gate, named AG-RC-IGBT, is proposed in this paper …
A snapback-free RC-IGBT with alternating N/P buffers
G Deng, X Luo, K Zhou, Q He, X Ruan… - … Devices and IC's …, 2017 - ieeexplore.ieee.org
A 1200V-class Reverse Conducting IGBT with Alternating N+/P Buffers (AB) is proposed and
its mechanism is investigated for the first time. The AB RC-IGBT features a buffer layer with …
its mechanism is investigated for the first time. The AB RC-IGBT features a buffer layer with …
A novel concept of electron–hole enhancement for superjunction reverse-conducting insulated gate bipolar transistor with electron-blocking layer
Z Wang, C Yang, X Huang - Micromachines, 2023 - mdpi.com
A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor
(SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic …
(SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic …
大功率半导体技术现状及其进展
刘国友， 王彦刚， 李想， 李孔竞， 杨松霖 - 机车电传动, 2021 - edl.csrzic.com
介绍了现代硅基大功率半导体器件的历史演变和新型器件结构的研究进展,
以及宽禁带半导体材料和器件的现状; 阐述了国内大功率半导体器件在轨道交通 …
以及宽禁带半导体材料和器件的现状; 阐述了国内大功率半导体器件在轨道交通 …