Preparation and properties of hemispherical CdMnTe nuclear radiation detectors

L Luan, H Lv, L Gao, Y He, D Zheng - … in Physics Research Section B: Beam …, 2020 - Elsevier
As a new generation of semiconductor materials, cadmium manganese telluride (CdMnTe)
is a candidate material for nuclear radiation detection in environmental monitoring and …

[PDF][PDF] Te 溶剂Bridgman 法CdMnTe 晶体核辐射探测器的制备和表征

杜园园, 姜维春, 陈晓, 雒涛 - 人工晶体学报, 2021 - researching.cn
碲锰镉(CdMnTe) 作为性能优异的室温核辐射探测器材料, 可用于环境监测和工业无损检测领域.
本文中采用Te 溶剂Bridgman 法生长In 掺杂Cd0. 9 Mn0. 1 Te 晶体, 制备成10 mm× 10 mm× 2 …

Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force microscopy

Y Gu, W Jie, L Li, Y Xu, Y Yang, J Ren, G Zha, T Wang… - Micron, 2016 - Elsevier
To understand the effects of tellurium (Te) inclusions on the device performance of CdZnTe
radiation detectors, the perturbation of the electrical field in and around Te inclusions was …

Correlated analysis of 2 MeV proton-induced radiation damage in CdZnTe crystals using photoluminescence and thermally stimulated current techniques

Y Gu, W Jie, C Rong, Y Wang, L Xu, Y Xu, H Lv… - Nuclear Instruments and …, 2016 - Elsevier
Radiation damage induced by 2 MeV protons in CdZnTe crystals has been studied by
means of photoluminescence (PL) and thermally stimulated current (TSC) techniques. A …

Study on the local stress induced dislocations on (1¯ 1¯ 1¯) Te face of CdTe-based crystals

X Fu, Y Xu, L Xu, Y Gu, N Jia, W Jie - Journal of Crystal Growth, 2017 - Elsevier
The rosette-like dislocation clusters around Te inclusions in as-grown CdZnTe/CdTe crystals
and those introduced by the micro-indentation on CdZnTe/CdTe surface are studied …

Investigation of X-ray radiation response to electrical properties of Mo/Cu (In0. 7Ga0. 3) Te2/p-Si/Al semiconductor diode

S Ağca, S Arslan, G Çankaya - Journal of New Results in Science, 2023 - dergipark.org.tr
Diodes are exposed to radiation in many operating environments, and it is important to
investigate the radiation effect. In this study, the impact of X-ray radiation on the electrical …

Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy

Y Gu, W Jie, C Rong, L Xu, Y Xu, H Lv, H Shen, G Du… - Micron, 2016 - Elsevier
The influence of damage induced by 2 MeV protons on CdZnTe radiation detectors is
investigated using ion beam induced charge (IBIC) microscopy. Charge collection efficiency …

Distinctive distribution of defects in CdZnTe: In ingots and their effects on the photoelectric properties

X Fu, FB Wang, XR Zuo, ZJ Wang, QR Wang… - Chinese …, 2018 - iopscience.iop.org
Abstract Photoelectric properties of CdZnTe: In samples with distinctive defect distributions
are investigated using various techniques. Samples cut from the head (T04) and tail (W02) …

Laser terahertz emission microscopy revealing the local fluctuation of terahertz generation induced by Te inclusion

J Dong, K Serita, F Murakami, I Kawayama… - Applied Physics …, 2021 - pubs.aip.org
As a state-of-the-art electro-optical crystal, zinc telluride (ZnTe) is widely used in terahertz
(THz) emission by optical rectification. However, the efficiency of THz generation in ZnTe is …

Effect of defects originating under the proton irradiation on the electrophysical and detector properties of CdTe: Cl and CdZnTe

AI Kondrik - Вопросы атомной науки и техники, 2021 - dspace.nbuv.gov.ua
The work is dedicated to studying by computer modeling the mechanisms of the influence of
radiation defects, originating under high energy proton irradiation, on the resistivity ρ …