Preparation and properties of hemispherical CdMnTe nuclear radiation detectors
L Luan, H Lv, L Gao, Y He, D Zheng - … in Physics Research Section B: Beam …, 2020 - Elsevier
As a new generation of semiconductor materials, cadmium manganese telluride (CdMnTe)
is a candidate material for nuclear radiation detection in environmental monitoring and …
is a candidate material for nuclear radiation detection in environmental monitoring and …
[PDF][PDF] Te 溶剂Bridgman 法CdMnTe 晶体核辐射探测器的制备和表征
杜园园, 姜维春, 陈晓, 雒涛 - 人工晶体学报, 2021 - researching.cn
碲锰镉(CdMnTe) 作为性能优异的室温核辐射探测器材料, 可用于环境监测和工业无损检测领域.
本文中采用Te 溶剂Bridgman 法生长In 掺杂Cd0. 9 Mn0. 1 Te 晶体, 制备成10 mm× 10 mm× 2 …
本文中采用Te 溶剂Bridgman 法生长In 掺杂Cd0. 9 Mn0. 1 Te 晶体, 制备成10 mm× 10 mm× 2 …
Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force microscopy
To understand the effects of tellurium (Te) inclusions on the device performance of CdZnTe
radiation detectors, the perturbation of the electrical field in and around Te inclusions was …
radiation detectors, the perturbation of the electrical field in and around Te inclusions was …
Correlated analysis of 2 MeV proton-induced radiation damage in CdZnTe crystals using photoluminescence and thermally stimulated current techniques
Y Gu, W Jie, C Rong, Y Wang, L Xu, Y Xu, H Lv… - Nuclear Instruments and …, 2016 - Elsevier
Radiation damage induced by 2 MeV protons in CdZnTe crystals has been studied by
means of photoluminescence (PL) and thermally stimulated current (TSC) techniques. A …
means of photoluminescence (PL) and thermally stimulated current (TSC) techniques. A …
Study on the local stress induced dislocations on (1¯ 1¯ 1¯) Te face of CdTe-based crystals
X Fu, Y Xu, L Xu, Y Gu, N Jia, W Jie - Journal of Crystal Growth, 2017 - Elsevier
The rosette-like dislocation clusters around Te inclusions in as-grown CdZnTe/CdTe crystals
and those introduced by the micro-indentation on CdZnTe/CdTe surface are studied …
and those introduced by the micro-indentation on CdZnTe/CdTe surface are studied …
Investigation of X-ray radiation response to electrical properties of Mo/Cu (In0. 7Ga0. 3) Te2/p-Si/Al semiconductor diode
Diodes are exposed to radiation in many operating environments, and it is important to
investigate the radiation effect. In this study, the impact of X-ray radiation on the electrical …
investigate the radiation effect. In this study, the impact of X-ray radiation on the electrical …
Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy
Y Gu, W Jie, C Rong, L Xu, Y Xu, H Lv, H Shen, G Du… - Micron, 2016 - Elsevier
The influence of damage induced by 2 MeV protons on CdZnTe radiation detectors is
investigated using ion beam induced charge (IBIC) microscopy. Charge collection efficiency …
investigated using ion beam induced charge (IBIC) microscopy. Charge collection efficiency …
Distinctive distribution of defects in CdZnTe: In ingots and their effects on the photoelectric properties
X Fu, FB Wang, XR Zuo, ZJ Wang, QR Wang… - Chinese …, 2018 - iopscience.iop.org
Abstract Photoelectric properties of CdZnTe: In samples with distinctive defect distributions
are investigated using various techniques. Samples cut from the head (T04) and tail (W02) …
are investigated using various techniques. Samples cut from the head (T04) and tail (W02) …
Laser terahertz emission microscopy revealing the local fluctuation of terahertz generation induced by Te inclusion
As a state-of-the-art electro-optical crystal, zinc telluride (ZnTe) is widely used in terahertz
(THz) emission by optical rectification. However, the efficiency of THz generation in ZnTe is …
(THz) emission by optical rectification. However, the efficiency of THz generation in ZnTe is …
Effect of defects originating under the proton irradiation on the electrophysical and detector properties of CdTe: Cl and CdZnTe
AI Kondrik - Вопросы атомной науки и техники, 2021 - dspace.nbuv.gov.ua
The work is dedicated to studying by computer modeling the mechanisms of the influence of
radiation defects, originating under high energy proton irradiation, on the resistivity ρ …
radiation defects, originating under high energy proton irradiation, on the resistivity ρ …