High-performance InAlN/GaN HEMTs on silicon substrate with high fT× Lg
We report an 80 nm gate-length In 0.17 Al 0.83 N/GaN high-electron mobility transistor
(HEMT) on silicon substrate with a record low gate leakage current of 7.12× 10− 7 A mm− 1 …
(HEMT) on silicon substrate with a record low gate leakage current of 7.12× 10− 7 A mm− 1 …
Implementation of High-Power-Density -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process
A GaN high electron mobility transistor monolithic microwave integrated circuit (MMIC)
designer typically has to choose a device design either for high-gain millimeter-wave …
designer typically has to choose a device design either for high-gain millimeter-wave …
High-Performance AlGaN/GaN HEMTs With Hybrid Schottky–Ohmic Drain for Ka-Band Applications
A hybrid Schottky–ohmic drain technology for millimeter-wave (mmW) AlGaN/GaN high-
electron-mobility transistors (HEMTs) is proposed. The Schottky metal extension in the …
electron-mobility transistors (HEMTs) is proposed. The Schottky metal extension in the …
Thermal mapping of defects in AlGaN∕ GaN heterostructure field-effect transistors using micro-Raman spectroscopy
We illustrate the use of micro-Raman mapping to study the local effect of defects on device
temperature in active Al Ga N∕ Ga N heterostructure field-effect transistors. Significant …
temperature in active Al Ga N∕ Ga N heterostructure field-effect transistors. Significant …
Effective suppression of IV knee walk-out in AlGaN/GaN HEMTs for pulsed-IV pulsed-RF with a large signal network analyzer
IV knee walk-out in AlGaN/GaN high electron mobility transistors (HEMTs) on a Sapphire
substrate is analyzed using dynamic radio frequency (RF) load-lines acquired with a large …
substrate is analyzed using dynamic radio frequency (RF) load-lines acquired with a large …
Systematic study on the self-assembled hexagonal Au voids, nano-clusters and nanoparticles on GaN (0001)
Au nano-clusters and nanoparticles (NPs) have been widely utilized in various electronic,
optoelectronic, and bio-medical applications due to their great potentials. The size, density …
optoelectronic, and bio-medical applications due to their great potentials. The size, density …
Structural inhomogeneities and impurity incorporation in growth of high-quality ammonothermal GaN substrates
NA Mahadik, SB Qadri, JA Freitas Jr - Crystal Growth & Design, 2015 - ACS Publications
Ammonothermal Gallium Nitride (GaN) substrates are the most promising substrates for
homoepitaxial growth of GaN films having low dislocation density. Growth-induced structural …
homoepitaxial growth of GaN films having low dislocation density. Growth-induced structural …
AlN/GaN MOS-HEMTs Technology
S Taking - 2012 - theses.gla.ac.uk
The ever increasing demand for higher power devices at higher frequencies has prompted
much research recently into the aluminium nitride/gallium nitride high electron mobility …
much research recently into the aluminium nitride/gallium nitride high electron mobility …
Surface strain and its impact on the electrical resistivity of GaN channel in AlGaN/GaN high electron mobility transistor
Localized strain in AlGaN/GaN high electron mobility transistor (HEMT) device structures
was studied by high resolution x-ray diffraction and rocking curve measurements, and the …
was studied by high resolution x-ray diffraction and rocking curve measurements, and the …
AlGaN/GaN HEMT temperature-dependent large-signal model thermal circuit extraction with verification through advanced thermal imaging
MJ Casto, SR Dooley - 2009 IEEE 10th Annual Wireless and …, 2009 - ieeexplore.ieee.org
Investigation has been done on procedure, development and verification of a large-signal,
temperature-dependent model for aluminum-gallium-nitride/gallium-nitride (AlGaN-GaN) …
temperature-dependent model for aluminum-gallium-nitride/gallium-nitride (AlGaN-GaN) …