Light absorption and filtering properties of vertically oriented semiconductor nano wires
SEO Kwanyong, M Wober, P Steinvurzel… - US Patent …, 2015 - Google Patents
(57) ABSTRACT A nanowire array is described herein. The nanowire array comprises a
substrate and a plurality of nanowires extending essentially vertically from the substrate; …
substrate and a plurality of nanowires extending essentially vertically from the substrate; …
Methods of manufacture of vertical nanowire FET devices
H Deligianni, Q Huang, LT Romankiw - US Patent 7,892,956, 2011 - Google Patents
(57) ABSTRACT A vertical Field Effect Transistor (FET) comprising a vertical semiconductor
nanowire is formed by the following steps. Create a columnar pore in a bottom dielectric …
nanowire is formed by the following steps. Create a columnar pore in a bottom dielectric …
Passivated upstanding nanostructures and methods of making the same
YJ Yu, M Wober - US Patent 9,082,673, 2015 - Google Patents
Described herein is a device comprising: a Substrate; one or more of a nanostructure
extending essentially perpendicu larly from the substrate; wherein the nanostructure …
extending essentially perpendicu larly from the substrate; wherein the nanostructure …
Shallow trench isolation process
MT Currie, AJ Lochtefeld - US Patent 7,504,704, 2009 - Google Patents
US7504704B2 - Shallow trench isolation process - Google Patents US7504704B2 -
Shallow trench isolation process - Google Patents Shallow trench isolation process …
Shallow trench isolation process - Google Patents Shallow trench isolation process …
Nanoelectronic structure and method of producing such
LI Samuelson, P Svensson, J Ohlsson… - US Patent …, 2011 - Google Patents
The present invention relates to semiconductor devices comprising semiconductor
nanoelements. In particular the invention relates to devices having a volume element having …
nanoelements. In particular the invention relates to devices having a volume element having …
Optoelectronic devices with organometal perovskites with mixed anions
H Snaith, M Lee, T Murakami - US Patent 11,038,132, 2021 - Google Patents
The invention provides an optoelectronic device comprising a mixed-anion perovskite,
wherein the mixed-anion perovskite comprises two or more different anions selected from …
wherein the mixed-anion perovskite comprises two or more different anions selected from …
Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits
EA Fitzgerald - US Patent 7,256,142, 2007 - Google Patents
4,997,776 5,013,681 5,034,348 5,089,872 5,091,767 5,108,946 5,155,571 5,166,084
5,177.583 5, 198,689 5,202,284 5,207,864 5,208, 182 5,212,110 5,212,112 5,217.923 …
5,177.583 5, 198,689 5,202,284 5,207,864 5,208, 182 5,212,110 5,212,112 5,217.923 …
LED with upstanding nanowire structure and method of producing such
LI Samuelson, B Pedersen, BJ Ohlsson - US Patent 8,183,587, 2012 - Google Patents
The present invention relates to light emitting diodes, LEDs. In particular the invention
relates to a LED comprising a nanowire as an active component. The nanostructured LED …
relates to a LED comprising a nanowire as an active component. The nanostructured LED …
Molding technique for fabrication of optoelectronic devices
MR Roscheisen, BM Sager, J Fidanza… - US Patent …, 2007 - Google Patents
(*) Notice: Subject to any disclaimer, the term of this OTHER PUBLICATIONS patent is
extended or adjusted under 35 USC 154 (b) by 596 days. de Tacconi et al, Semiconductor …
extended or adjusted under 35 USC 154 (b) by 596 days. de Tacconi et al, Semiconductor …