Spin-transfer-torque oscillator with an antiferromagnetic exchange-coupled composite free layer
We present an antiferromagnetically exchange-coupled composite (soft and hard layers)
spin torque oscillator (AF-ECC STO) and demonstrate its operation via both analytical and …
spin torque oscillator (AF-ECC STO) and demonstrate its operation via both analytical and …
Thin-film heterostructures based on Co/Ni synthetic antiferromagnets on polymer tapes: toward sustainable flexible spintronics
Synthetic antiferromagnets with perpendicular magnetic anisotropy (PMA-SAFs) have
gained growing attention for both conventional and next-generation spin-based …
gained growing attention for both conventional and next-generation spin-based …
Evaluating critical metals contained in spintronic memory with a particular focus on Pt substitution for improved sustainability
A Palomino, J Marty, S Auffret, I Joumard… - Sustainable Materials …, 2021 - Elsevier
Thanks to their unique combination of properties: non-volatility, speed, density and write
endurance, spintronic memory called spin transfer-torque Magnetic Random Access …
endurance, spintronic memory called spin transfer-torque Magnetic Random Access …
TaFeB spacer for soft magnetic composite free layer in CoFeB/MgO/CoFeB-based magnetic tunnel junction
T Nakano, K Fujiwara, S Kumagai, Y Ando… - Applied Physics …, 2023 - pubs.aip.org
CoFeB/MgO/CoFeB-based magnetic tunnel junctions (MTJs) with a soft magnetic composite
free layer have been developed for magnetic sensor applications. Tunnel …
free layer have been developed for magnetic sensor applications. Tunnel …
Control of interlayer exchange coupling and its impact on spin–torque switching of hybrid free layers with perpendicular magnetic anisotropy
To ensure data retention in high-density spin-transfer-torque magnetic random access
memory (STT-MRAM), a [Co/Ni]-CoFeB hybrid free layer (HFL) with a high energy barrier …
memory (STT-MRAM), a [Co/Ni]-CoFeB hybrid free layer (HFL) with a high energy barrier …
[图书][B] Micromagnetic modeling and analysis of magnetic tunnel junctions for spintronics applications
I Volvach - 2021 - search.proquest.com
Magnetic materials and nanoscale devices are remaining at the center of data storage
technologies, from well-known magnetic hard drives to future spintronic devices such as …
technologies, from well-known magnetic hard drives to future spintronic devices such as …
Scalable spintronics devices with reduced Pt and Ru content
A Palomino - 2022 - theses.hal.science
In the field of information and communication technologies (ICT), the development of non-
volatile memories is crucial to reduce the amount of energy required to store and process …
volatile memories is crucial to reduce the amount of energy required to store and process …
[PDF][PDF] Materials and designs of magnetic tunnel junctions with perpendicular magnetic anisotropy for high-density memory applications
E Liu - 2018 - lirias.kuleuven.be
As the demand for faster, smaller and more power-efficient devices is increasing,
conventional memories such as DRAM and SRAM are reaching their scaling limits. New …
conventional memories such as DRAM and SRAM are reaching their scaling limits. New …